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MB85R256FPFCN-G-BNDE1备选型号: IS42S16800F-7TL

MB85R256FPFCN-G-BNDE1

Fujitsu Electronics America, Inc.

IC FRAM 256K PARALLEL 28TSOP I

12 Weeks
表面贴装
28-TSSOP (0.465, 11.80mm Width)
28-TSOP I
Non-Volatile
-40°C~85°C TA
Tray
2006
活跃
1 (Unlimited)
85°C
-40°C
2.7V~3.6V
Parallel
256Kb 32K x 8
150ns
FRAM
Parallel
150ns
符合RoHS标准
无铅
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-
-
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IS42S16800F-7TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54TSOP

6 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
-
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
-
-
3.3V
-
128Mb 8M x 16
5.4ns
DRAM
Parallel
-
ROHS3 Compliant
-
表面贴装
54
100mA
e3
yes
54
EAR99
Matte Tin (Sn)
AUTO/SELF REFRESH
DUAL
260
1
0.8mm
10
不合格
1
SYNCHRONOUS
143MHz
16b
8MX16
3-STATE
14b
128 Mb
0.002A
COMMON
3.6V
3V
4096
1.05mm
22.42mm
10.29mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-7TL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	128M, 3.3V, SDRAM, 8MX16, 143M	对比
	CY7C1399BN-15ZXI	Cypress Semiconductor Corp	存储器	28-TSSOP (0.465, 11.80mm Width)	IC SRAM 256KBIT 15NS 28TSOP	对比
	IS42S16800F-7TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC SDRAM 128MBIT 143MHZ 54TSOP	对比