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MT16HTF51264HZ-800C1备选型号: MT4HTF6464HZ-800H1

MT16HTF51264HZ-800C1

Micron Technology Inc.

DRAM Module DDR2 SDRAM 4Gbyte 200SODIMM Tray

5 Weeks
Gold
Socket
200-SODIMM
200
DDR2 SDRAM
2010
e4
yes
Obsolete
3 (168 Hours)
200
EAR99
70°C
0°C
AUTO/SELF REFRESH; WD-MAX
8542.32.00.36
ZIG-ZAG
260
1
1.8V
0.6mm
30
200
1.8V
COMMERCIAL
1.9V
1.7V
4GB
1
800MT/s
400MHz
64b
512MX64
3-STATE
64
34359738368 bit
800MHz
0.4 ns
COMMON
8192
双库页面突发
67.6mm
30.15mm
无
ROHS3 Compliant
-
-
-
-
MT4HTF6464HZ-800H1

Micron Technology Inc.

DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM

-
-
Socket
200-SODIMM
200
DDR2 SDRAM
2010
e3
yes
Obsolete
3 (168 Hours)
200
-
70°C
0°C
SELF REFRESH; WD-MAX
-
ZIG-ZAG
260
1
1.8V
0.6mm
30
-
1.8V
COMMERCIAL
1.9V
1.7V
512MB
1
800MT/s
-
64b
-
3-STATE
64
-
800MHz
-
COMMON
8192
-
67.6mm
30.15mm
无
ROHS3 Compliant
Matte Tin (Sn)
900 ns
0.028A
无铅
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存储卡，模块相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	MT4HTF6464HZ-800H1	Micron Technology Inc.	存储器 - 模块	200-SODIMM	DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM	对比
	MT4HTF6464HZ-667H1	Micron Technology Inc.	存储器 - 模块	200-SODIMM	MODUL DDR2 SDRAM 512MB 200SODIMM	对比