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MT41K256M8DA-107:K备选型号: MT41K512M8DA-107:P

MT41K256M8DA-107:K

Micron Technology Inc.

DRAM Chip DDR3L SDRAM 2G-Bit 256Mx8 1.35V 78-Pin FBGA

12 Weeks
表面贴装
表面贴装
78-TFBGA
78
Volatile
0°C~95°C TC
Tray
2012
e1
活跃
3 (168 Hours)
78
EAR99
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
8542.32.00.36
1.35V
BOTTOM
260
1
0.8mm
30
MT41K256M8
2Gb 256M x 8
1
933MHz
20ns
DRAM
Parallel
8b
256MX8
3-STATE
8
18b
2 Gb
0.012A
COMMON
1.45V
1.283V
8192
8
8
10.5mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
MT41K512M8DA-107:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

-
表面贴装
表面贴装
78-TFBGA
78
Volatile
0°C~95°C TC
Tray
2015
-
活跃
3 (168 Hours)
78
EAR99
-
-
1.35V
BOTTOM
未说明
1
0.8mm
未说明
-
4Gb 512M x 8
1
933MHz
20ns
DRAM
Parallel
8b
512MX8
-
8
16b
4 Gb
-
-
1.45V
1.283V
-
-
-
10.5mm
-
-
ROHS3 Compliant
无铅
Copper, Silver, Tin
AUTO/SELF REFRESH
SYNCHRONOUS
1.2mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	MT41K512M8DA-107:P	Micron Technology Inc.	存储器	78-TFBGA	IC DRAM 4G PARALLEL 78FBGA	对比
	IS43TR85120A-125KBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比