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MT46V64M8TG-5B:J备选型号: IS42S16800F-7TL

MT46V64M8TG-5B:J

Micron Technology Inc.

DRAM Chip DDR SDRAM 512M-Bit 64Mx8 2.6V 66-Pin TSOP

表面贴装
66-TSSOP (0.400, 10.16mm Width)
YES
66
Volatile
0°C~70°C TA
Bulk
2011
Obsolete
3 (168 Hours)
66
EAR99
AUTO/SELF REFRESH
8542.32.00.28
2.5V~2.7V
DUAL
1
2.6V
0.65mm
66
2.6V
2.7V
2.5V
512Mb 64M x 8
1
200MHz
700ps
DRAM
Parallel
8b
64MX8
3-STATE
8
15ns
15b
512 Mb
0.005A
400MHz
COMMON
8192
248
248
22.22mm
1.2mm
无
Non-RoHS Compliant
含铅
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16800F-7TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54TSOP

表面贴装
54-TSOP (0.400, 10.16mm Width)
-
54
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
-
3V~3.6V
DUAL
1
3.3V
0.8mm
54
3.3V
3.6V
3V
128Mb 8M x 16
1
143MHz
5.4ns
DRAM
Parallel
16b
8MX16
3-STATE
-
-
14b
128 Mb
0.002A
-
COMMON
4096
-
-
22.42mm
-
-
ROHS3 Compliant
-
6 Weeks
表面贴装
e3
yes
Matte Tin (Sn)
260
10
不合格
100mA
SYNCHRONOUS
1.05mm
10.29mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-6TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V	对比
	IS42S16800F-7TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC SDRAM 128MBIT 143MHZ 54TSOP	对比
	IS43R16160D-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM	对比