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MT49H16M36BM-33:B备选型号: IS64LF12836EC-7.5B3LA3

MT49H16M36BM-33:B

Micron Technology Inc.

DRAM Chip RLDRAM 576M-Bit 16Mx36 1.8V 144-Pin mBGA Tray

144-TFBGA
表面贴装
表面贴装
144
Volatile
Bulk
2015
0°C~95°C TC
e1
Discontinued
3 (168 Hours)
144
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
自动刷新
8542.32.00.32
1.8V
BOTTOM
1
1mm
MT49H16M36
1.5/1.81.82.5V
576Mb 16M x 36
1
20ns
DRAM
Parallel
36b
16MX36
3-STATE
36
23b
576 Mb
0.055A
300MHz
COMMON
1.9V
1.7V
248
1.2mm
18.5mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
IS64LF12836EC-7.5B3LA3

ISSI, Integrated Silicon Solution Inc

SRAM 4Mb, 3.3v, 7.5ns 128K x 36 Sync SRAM

165-TBGA
表面贴装
-
165
Volatile
Tray
-
-40°C~125°C TA
e1
活跃
3 (168 Hours)
165
3A991.B.2.A
Tin/Silver/Copper (Sn/Ag/Cu)
-
-
3.135V~3.465V
BOTTOM
1
1mm
-
2.5/3.33.3V
4.5Mb 128K x 36
4
7.5ns
SRAM
Parallel
-
128KX36
3-STATE
36
17b
4 Mb
0.1A
-
COMMON
-
3.135V
-
1.2mm
15mm
-
ROHS3 Compliant
-
12 Weeks
YES
185mA
260
10
不合格
117MHz
AEC-Q100
Synchronous
36b
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS64LF12836EC-7.5B3LA3	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	SRAM 4Mb, 3.3v, 7.5ns 128K x 36 Sync SRAM	对比
	MT49H32M9BM-33:B	Micron Technology Inc.	存储器	144-TFBGA	DRAM Chip RLDRAM 288M-Bit 32Mx9 1.8V 144-Pin mBGA Tray	对比