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MT49H8M36BM-33:B备选型号: IS64LF12836EC-7.5B3LA3

MT49H8M36BM-33:B

Micron Technology Inc.

DRAM Chip RLDRAM 288M-Bit 8Mx36 1.8V 144-Pin mBGA Tray

表面贴装
表面贴装
144-TFBGA
144
Volatile
0°C~95°C TC
Bulk
2015
e1
Discontinued
3 (168 Hours)
144
Tin/Silver/Copper (Sn/Ag/Cu)
自动刷新
1.7V~1.9V
BOTTOM
260
1
1.8V
1mm
30
MT49H8M36
1.8V
1.9V
1.5/1.81.82.5V
1.7V
288Mb 8M x 36
1
333MHz
20ns
DRAM
Parallel
36b
8MX36
3-STATE
36
22b
288 Mb
300MHz
COMMON
248
18.5mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
IS64LF12836EC-7.5B3LA3

ISSI, Integrated Silicon Solution Inc

SRAM 4Mb, 3.3v, 7.5ns 128K x 36 Sync SRAM

-
表面贴装
165-TBGA
165
Volatile
-40°C~125°C TA
Tray
-
e1
活跃
3 (168 Hours)
165
Tin/Silver/Copper (Sn/Ag/Cu)
-
3.135V~3.465V
BOTTOM
260
1
3.3V
1mm
10
-
-
-
2.5/3.33.3V
3.135V
4.5Mb 128K x 36
4
117MHz
7.5ns
SRAM
Parallel
-
128KX36
3-STATE
36
17b
4 Mb
-
COMMON
-
15mm
1.2mm
-
ROHS3 Compliant
-
12 Weeks
YES
3A991.B.2.A
165
不合格
185mA
0.1A
AEC-Q100
Synchronous
36b
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图片	产品型号	品牌	分类	封装	描述	对比
	IS64LF12836EC-7.5B3LA3	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	SRAM 4Mb, 3.3v, 7.5ns 128K x 36 Sync SRAM	对比
	IS61VPS51236B-200B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	IC SRAM 18M PARALLEL 165TFBGA	对比
	MT49H32M9BM-33:B	Micron Technology Inc.	存储器	144-TFBGA	DRAM Chip RLDRAM 288M-Bit 32Mx9 1.8V 144-Pin mBGA Tray	对比