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MT49H8M36SJ-25E:B备选型号: MT49H16M18CSJ-25:B

MT49H8M36SJ-25E:B

Micron Technology Inc.

DRAM Chip RLDRAM2 228M-Bit 8Mx36 1.8V 144-Pin FBGA

8 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
144-TFBGA
144
Volatile
0°C~95°C TC
Tray
2015
活跃
3 (168 Hours)
144
EAR99
自动刷新
1.7V~1.9V
BOTTOM
1
1.8V
1mm
1.8V
1.9V
1.7V
288Mb 8M x 36
1
SYNCHRONOUS
15ns
DRAM
Parallel
36b
8MX36
36
21b
228 Mb
400MHz
18.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
MT49H16M18CSJ-25:B

Micron Technology Inc.

DRAM Chip RLDRAM2 288M-Bit 16Mx18 1.8V 144-Pin FBGA

8 Weeks
-
-
表面贴装
144-TBGA
144
Volatile
0°C~95°C TC
Tray
2015
Obsolete
3 (168 Hours)
-
-
-
1.7V~1.9V
-
-
-
-
1.8V
-
-
288Mb 16M x 18
-
-
20ns
DRAM
Parallel
-
-
-
20b
288 Mb
400MHz
-
-
ROHS3 Compliant
144-FBGA (18.5x11)
95°C
0°C
Parallel
400MHz
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	MT49H16M18SJ-25:B	Micron Technology Inc.	存储器	144-TBGA	DRAM Chip RLDRAM2 288M-Bit 16Mx18 1.8V 144-Pin FBGA	对比
	MT49H16M18CSJ-25:B	Micron Technology Inc.	存储器	144-TBGA	DRAM Chip RLDRAM2 288M-Bit 16Mx18 1.8V 144-Pin FBGA	对比