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N25Q016A11EF640E备选型号: IS25LQ040B-JNLE

N25Q016A11EF640E

Micron Technology Inc.

IC FLASH 16M SPI 108MHZ 8DFN

4 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
8-VDFN Exposed Pad
8
Non-Volatile
-40°C~85°C TA
Bulk
Obsolete
3 (168 Hours)
8
1.7V~2V
DUAL
1
1.8V
1.27mm
unknown
1.8V
2V
1.7V
SPI, Serial
16Mb 2M x 8
SYNCHRONOUS
108MHz
FLASH
SPI
8
8ms, 1ms
16 Mb
256B
6mm
1mm
5mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
IS25LQ040B-JNLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 4M SPI 104MHZ 8SOIC

8 Weeks
-
表面贴装
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
Non-Volatile
-40°C~105°C TA
Bulk
活跃
3 (168 Hours)
8
2.3V~3.6V
DUAL
1
3V
1.27mm
-
3.3V
3.6V
2.3V
SPI
4Mb 512K x 8
SYNCHRONOUS
104MHz
FLASH
SPI - Quad I/O
1
800μs
4 Mb
256B
4.9mm
-
-
ROHS3 Compliant
e3
Tin (Sn)
未说明
未说明
8 ns
4MX1
24b
SERIAL
3V
1.75mm
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	LE25U40CMC-AH	ON Semiconductor	存储器	8-SOIC (0.154, 3.90mm Width)	Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8-Pin SOP-J T/R	对比
	IS25WQ040-JNLE	ISSI, Integrated Silicon Solution Inc	存储器	8-SOIC (0.209, 5.30mm Width)	IC FLASH 4M SPI 104MHZ 8SOP	对比
	IS25LQ040B-JNLE	ISSI, Integrated Silicon Solution Inc	存储器	8-SOIC (0.154, 3.90mm Width)	IC FLASH 4M SPI 104MHZ 8SOIC	对比