登录 / 注册

产品

输入型号/关键词

SPB03N60C3ATMA1备选型号: SPB02N60C3ATMA1

SPB03N60C3ATMA1

Infineon Technologies

Trans MOSFET N-CH 600V 3.2A 3-Pin(2 Tab) TO-263

表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SILICON
3.2A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2005
e3
no
Obsolete
1 (Unlimited)
2
EAR99
Tin (Sn)
AVALANCHE RATED, HIGH VOLTAGE
SINGLE
鸥翼
4
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
38W
7 ns
N-Channel
SWITCHING
1.4 Ω @ 2A, 10V
3.9V @ 135μA
无卤素
400pF @ 25V
17nC @ 10V
3ns
650V
±20V
12 ns
3.2A
20V
600V
9.6A
无
符合RoHS标准
含铅
-
-
SPB02N60C3ATMA1

Infineon Technologies

Trans MOSFET N-CH 600V 1.8A 3-Pin(2 Tab) TO-263

表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SILICON
1.8A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2005
e3
no
Obsolete
1 (Unlimited)
2
EAR99
Tin (Sn)
雪崩额定
SINGLE
鸥翼
4
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
25W
6 ns
N-Channel
SWITCHING
3 Ω @ 1.1A, 10V
3.9V @ 80μA
无卤素
200pF @ 25V
12.5nC @ 10V
3ns
650V
±20V
12 ns
1.8A
20V
600V
5.4A
无
Non-RoHS Compliant
含铅
3Ohm
50 mJ
添加型号

分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	SPB08P06PGATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET P-CH 60V 8.8A TO-263	对比
	SPB02N60C3ATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans MOSFET N-CH 600V 1.8A 3-Pin(2 Tab) TO-263	对比