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W9425G6JB-5备选型号: IS42S16160G-7BLI

W9425G6JB-5

Winbond Electronics

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA

10 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
2016
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.24
2.3V~2.7V
BOTTOM
未说明
1
2.5V
0.8mm
未说明
60
不合格
2.5V
2.7V
2.3V
256Mb 16M x 16
1
120mA
SYNCHRONOUS
200MHz
55ns
DRAM
Parallel
16MX16
3-STATE
16
15ns
15b
256 Mb
0.005A
COMMON
8192
248
248
13mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
IS42S16160G-7BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V

6 Weeks
表面贴装
表面贴装
54-TFBGA
54
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
-
3V~3.6V
BOTTOM
260
1
3.3V
0.8mm
10
54
-
3.3V
3.6V
3V
256Mb 16M x 16
1
130mA
-
143MHz
5.4ns
DRAM
Parallel
16MX16
3-STATE
16
-
15b
256 Mb
0.004A
COMMON
8192
1248FP
1248
8mm
1.2mm
ROHS3 Compliant
e1
Tin/Silver/Copper (Sn/Ag/Cu)
16b
无
无SVHC
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	MT47H64M8SH-25E:H	Micron Technology Inc.	存储器	60-TFBGA	IC SDRAM 512MBIT 400MHZ 60FBGA	对比
	IS42S16160G-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V	对比
	IS43R16160F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA	对比