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W947D6HBHX5I备选型号: IS42S16400J-7B2LI

W947D6HBHX5I

Winbond Electronics

DRAM Chip Mobile LPDDR SDRAM 128M-Bit 8Mx16 1.8V 60-Pin VFBGA

10 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~85°C TA
Tray
2011
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.02
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
60
1.8V
1.95V
1.7V
128Mb 8M x 16
1
55mA
200MHz
5ns
DRAM
Parallel
8MX16
3-STATE
16
15ns
14b
128 Mb
0.00001A
COMMON
4096
24816
24816
9mm
1.025mm
无
ROHS3 Compliant
-
-
-
-
IS42S16400J-7B2LI

ISSI, Integrated Silicon Solution Inc

DRAM 64M, 3.3V, 143Mhz SDR SDRAM

6 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
BOTTOM
1
3.3V
0.65mm
60
3.3V
3.6V
3V
64Mb 4M x 16
1
90mA
143MHz
5.4ns
DRAM
Parallel
4MX16
3-STATE
16
-
14b
64 Mb
-
COMMON
4096
1248FP
1248
10.1mm
1.2mm
无
ROHS3 Compliant
Copper, Silver, Tin
16b
NO
YES
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7B2LI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 64M, 3.3V, 143Mhz SDR SDRAM	对比
	MT47H64M8SH-25E:H	Micron Technology Inc.	存储器	60-TFBGA	IC SDRAM 512MBIT 400MHZ 60FBGA	对比
	IS42S16400J-5BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TFBGA	对比