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W972GG8JB-25备选型号: IS43LR16160G-6BLI

W972GG8JB-25

Winbond Electronics

DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA

表面贴装
表面贴装
60-TFBGA
60
Volatile
135mA
0°C~85°C TC
Tray
2011
Obsolete
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.36
1.8V
BOTTOM
未说明
1
0.8mm
未说明
不合格
2Gb 256M x 8
1
SYNCHRONOUS
200MHz
400ps
DRAM
Parallel
8b
256MX8
3-STATE
8
15ns
18b
2 Gb
0.012A
800MHz
COMMON
1.9V
1.7V
8192
48
48
11.5mm
1.2mm
ROHS3 Compliant
无铅
-
-
-
-
IS43LR16160G-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM

表面贴装
表面贴装
60-TFBGA
60
Volatile
-
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
60
-
AUTO/SELF REFRESH
-
1.8V
BOTTOM
-
1
0.8mm
-
-
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
16b
16MX16
-
16
15ns
13b
256 Mb
-
-
-
1.95V
1.7V
-
-
-
10mm
1.1mm
ROHS3 Compliant
-
14 Weeks
Copper, Silver, Tin
e1
Tin/Silver/Copper (Sn/Ag/Cu)
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图片	产品型号	品牌	分类	封装	描述	对比
	MT47H64M8SH-25E:H	Micron Technology Inc.	存储器	60-TFBGA	IC SDRAM 512MBIT 400MHZ 60FBGA	对比
	IS43LR16160G-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM	对比