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W9751G8KB-25备选型号: IS42S16800F-6BLI

W9751G8KB-25

Winbond Electronics

DRAM Chip DDR2 SDRAM 512M-Bit 32Mx8 1.8V 60-Pin WBGA

表面贴装
表面贴装
60-TFBGA
Volatile
0°C~85°C TC
Tray
1996
e1
yes
最后一次购买
3 (168 Hours)
60
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
8542.32.00.28
1.7V~1.9V
BOTTOM
未说明
1
1.8V
0.8mm
未说明
60
R-PBGA-B60
1.8V
1.9V
1.7V
512Mb 64M x 8
1
SYNCHRONOUS
400ps
DRAM
Parallel
8b
64MX8
8
15ns
14b
4 Gb
400MHz
12.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16800F-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V

表面贴装
表面贴装
54-TFBGA
Volatile
-40°C~85°C TA
Tray
-
-
-
活跃
3 (168 Hours)
54
EAR99
-
AUTO/SELF REFRESH
-
3V~3.6V
BOTTOM
-
1
3.3V
0.8mm
-
54
-
3.3V
3.6V
3V
128Mb 8M x 16
1
SYNCHRONOUS
5.4ns
DRAM
Parallel
16b
8MX16
16
-
14b
128 Mb
-
8mm
1.2mm
ROHS3 Compliant
6 Weeks
54
不合格
120mA
166MHz
3-STATE
0.002A
COMMON
4096
1248FP
1248
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V	对比
	IS42S16400J-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比