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W978H2KBQX2E备选型号: 71V35761S166BGGI

W978H2KBQX2E

Winbond Electronics

IC SDRAM 256MBIT 400MHZ 168WFBGA

表面贴装
168-WFBGA
YES
168
Volatile
-25°C~85°C TC
Tray
2016
Obsolete
3 (168 Hours)
168
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
1.14V~1.95V
BOTTOM
1
1.2V
0.5mm
1.3V
1.14V
256Mb 8M x 32
1
SYNCHRONOUS
400MHz
DRAM
Parallel
8MX32
32
15ns
268435456 bit
四库页面突发
12mm
0.8mm
12mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V35761S166BGGI

Integrated Device Technology (IDT)

SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

-
BGA
-
119
166MHz
-
-
2009
Discontinued
3 (168 Hours)
119
流水线结构
-
BOTTOM
1
3.3V
-
-
-
512kB
1
-
-
-
-
-
-
-
-
-
14mm
2.36mm
22mm
符合RoHS标准
表面贴装
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
85°C
-40°C
BALL
260
166MHz
30
119
3.3V
INDUSTRIAL
Parallel
3.465V
3.135V
330mA
3.5 ns
3-STATE
17b
4.5 Mb
0.035A
COMMON
Synchronous
36b
2.15mm
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	71V35761S166BGI	Integrated Device Technology (IDT)	存储器	BGA	SRAM 4 MEG PBSRAM W/ FAST TC	对比
	71V35761S166BGGI	Integrated Device Technology (IDT)	存储器	BGA	SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM	对比
	71V35761S200BGG	Integrated Device Technology (IDT)	存储器	BGA	SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM	对比