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W978H2KBVX2E备选型号: IS43TR16640BL-125JBL

W978H2KBVX2E

Winbond Electronics

IC SDRAM 256MBIT 400MHZ 134VFBGA

10 Weeks
YES
134-VFBGA
表面贴装
134
Volatile
2016
Tray
-25°C~85°C TC
活跃
3 (168 Hours)
134
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
1.14V~1.95V
BOTTOM
1
0.65mm
256Mb 8M x 32
1
SYNCHRONOUS
400MHz
DRAM
Parallel
8MX32
32
15ns
268435456 bit
1.3V
1.14V
四库页面突发
10mm
1mm
11.5mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS43TR16640BL-125JBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin TWBGA

6 Weeks
YES
96-TFBGA
表面贴装
96
Volatile
-
Tray
0°C~95°C TC
活跃
3 (168 Hours)
96
AUTO/SELF REFRESH
1.35V
BOTTOM
1
0.8mm
1Gb 64M x 16
1
SYNCHRONOUS
800MHz
DRAM
Parallel
64MX16
16
15ns
-
1.575V
1.425V
-
-
1.2mm
13mm
ROHS3 Compliant
e1
EAR99
锡银铜
8542.32.00.32
未说明
未说明
20ns
13b
1 Gb
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR16640BL-125JBL	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin TWBGA	对比