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W9825G2JB-6I备选型号: IS42S32800G-6BL

W9825G2JB-6I

Winbond Electronics

DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA

10 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
-40°C~85°C TA
Tray
2011
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.24
2.7V~3.6V
BOTTOM
1
3.3V
0.8mm
90
3.3V
3.6V
2.7V
256Mb 8M x 32
1
150mA
166MHz
5ns
DRAM
Parallel
32b
8MX32
32
12b
256 Mb
0.004A
COMMON
4096
1248FP
1248
13mm
1.2mm
无
ROHS3 Compliant
-
-
-
IS42S32800G-6BL

ISSI, Integrated Silicon Solution Inc

DRAM 256M 8Mx32 166Mhz SDR SDRAM, 3.3V

8 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.24
3V~3.6V
BOTTOM
1
3.3V
0.8mm
90
3.3V
3.6V
3V
256Mb 8M x 32
1
180mA
166MHz
5.4ns
DRAM
Parallel
32b
8MX32
32
14b
256 Mb
0.003A
COMMON
4096
1248FP
1248
13mm
1.2mm
-
ROHS3 Compliant
不合格
SYNCHRONOUS
3-STATE
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32800D-6BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	IC SDRAM 256MBIT 166MHZ 90FBGA	对比
	IS42SM32800K-75BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM 256M, 3.3V, 133Mhz 8Mx32 Mobile SDR	对比