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W987D2HBJX6I备选型号: IS42S16400J-6BL-TR

W987D2HBJX6I

Winbond Electronics

IC DRAM 128M PARALLEL 90VFBGA

表面贴装
90-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2011
不用于新设计
3 (168 Hours)
90
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
R-PBGA-B90
不合格
1.8V
128Mb 4M x 32
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
4MX32
3-STATE
32
15ns
0.00001A
134217728 bit
COMMON
1.95V
1.7V
4096
1248FP
1248
13mm
1.025mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
IS42S16400J-6BL-TR

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R

表面贴装
54-TFBGA
-
Volatile
0°C~70°C TA
Tape & Reel (TR)
-
活跃
3 (168 Hours)
54
-
3.3V
BOTTOM
-
0.8mm
-
-
-
64Mb 4M x 16
-
-
166MHz
5.4ns
DRAM
Parallel
4MX16
3-STATE
16
-
0.002A
-
COMMON
-
-
4096
1248FP
1248
-
-
-
ROHS3 Compliant
6 Weeks
表面贴装
54
100mA
16b
14b
64 Mb
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-6BLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	IC DRAM 64M PARALLEL 54TFBGA	对比
	IS42S16400J-6BL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R	对比