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W987D6HBGX7E备选型号: IS42VM16800H-75BLI

W987D6HBGX7E

Winbond Electronics

DRAM Chip Mobile LPSDR SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA

表面贴装
表面贴装
54-TFBGA
54
Volatile
-25°C~85°C TC
Tray
2011
e1
不用于新设计
3 (168 Hours)
54
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
1.8V
1.95V
1.7V
128Mb 8M x 16
1
70mA
133MHz
5.4ns
DRAM
Parallel
8MX16
3-STATE
16
15ns
14b
128 Mb
0.00001A
COMMON
4096
1248FP
1248
9mm
1.025mm
无
ROHS3 Compliant
-
-
-
-
-
-
IS42VM16800H-75BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin TFBGA

-
表面贴装
54-TFBGA
54
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
54
-
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
1.8V
1.95V
1.7V
128Mb 8M x 16
1
-
133MHz
6ns
DRAM
Parallel
8MX16
-
16
-
12b
128 Mb
-
-
-
-
-
8mm
1.2mm
-
ROHS3 Compliant
12 Weeks
YES
EAR99
未说明
未说明
SYNCHRONOUS
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