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W989D2DBJX6I备选型号: IS42S16800F-6BLI

W989D2DBJX6I

Winbond Electronics

IC DRAM 512M PARALLEL 90VFBGA

10 Weeks
表面贴装
90-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2016
yes
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
R-PBGA-B90
1.95V
1.7V
512Mb 16M x 32
1
SYNCHRONOUS
166MHz
5ns
DRAM
Parallel
16MX32
32
15ns
536870912 bit
13mm
1.025mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16800F-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V

6 Weeks
表面贴装
54-TFBGA
-
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
54
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
-
3.6V
3V
128Mb 8M x 16
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
8MX16
16
-
-
8mm
1.2mm
-
ROHS3 Compliant
表面贴装
54
EAR99
54
不合格
3.3V
120mA
16b
3-STATE
14b
128 Mb
0.002A
COMMON
4096
1248FP
1248
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V	对比
	IS42S16400J-6BL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R	对比