N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

15

Bulk

GS8672D19BE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.3 A

4 M x 18

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

表面贴装

2.7, 3.6 V

18 Bit

2 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

133@Flow-Through/150@Pipelined MHz

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

18

0 to 85 °C

Bulk

GS8321E18AGD

DCD Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

GS8342S09BD

85 °C

0 °C

1.8 V

36 Mbit

2

705 mA

Pipelined

4 M x 9

21 Bit

36 Mbit

Commercial

无

N/A

-

8 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x13)

165

- 40 C

1.7 V

SMD/SMT

GSI Technology Inc.

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662DT38BGD-500I

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.66

BGA

Industrial grade

FBGA

1.8000 V

1.7 V

36 Bit

1.9 V

Tray

GS8662D

活跃

Volatile

500 MHz

+ 85 C

1.9 V

-40 to 100 °C

-

3A991.B.2.B

流水线结构

8542.32.00.41

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72Mbit

SYNCHRONOUS

500 MHz

1.17 A

0.45

SRAM

Parallel

2 M x 36

1.4 mm

36

-

19 Bit

72

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

2M x 36

15 mm

13 mm

N/A

-

BGA-165

165

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

GS8162Z36DD

85 °C

0 °C

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342T08BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

DDR

SigmaDDR-II+

GSI技术

GSI技术

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342TT10BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

460 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

7.5 ns

70 °C

有

GS8322Z18AGB-150

150 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

0 to 85 °C

Bulk

GS8322Z18AGB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

Bulk

GS816236DD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

250 mA, 270 mA

5.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

无

N/A

-

YES

100

100

FLATPACK, LOW PROFILE

QFP

5.69

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

LQFP

2.5 V

524288 words

GS8160E32BGT-150

有

70 °C

7.5 ns

未说明

PLASTIC/EPOXY

512000

3

LQFP,

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

512KX32

1.6 mm

32

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z18AD-150

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

Tray

GS8321Z18AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS816032BGT-200

200 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.67

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

SYNCHRONOUS

0.255 mA

512KX32

3-STATE

1.6 mm

32

16777216 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8182Q36

活跃

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8182Q36BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

18 Mbit

2

333 MHz

1.015 A

SRAM

Parallel

Pipelined

512 k x 36

-

18 Bit

SRAM

18 Mbit

Industrial

SRAM

512K x 36

N/A

-

6 Weeks

YES

44

44

512000

PLASTIC/EPOXY

TSOP2

1.52

GSI TECHNOLOGY

不推荐

GSI技术

RECTANGULAR

TSOP2

3.3 V

524288 words

GS74108AGP-8

有

70 °C

8 ns

未说明

TSOP2,

SMALL OUTLINE, THIN PROFILE

3

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

COMMERCIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Tray

GS8342TT

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342TT38BGD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.9

BGA

Industrial grade

500 MHz

-40 to 100 °C

Tray

GS8342TT38BGD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

500 MHz

955 mA

SRAM

Parallel

Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

1M x 36

15 mm

13 mm

N/A

-

BGA-48

Parallel

GSI技术

GSI技术

Details

3.6 V

270

3 V

SMD/SMT

GS71116AGU

Asynchronous

Memory & Data Storage

1 Mbit

85 mA

12 ns

64 k x 16

SRAM

SRAM

N/A

-

N/A

-

BGA-165

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

9 Mbit

175 mA, 215 mA

5.5 ns

256 k x 32

N/A

-

N/A

-

BGA-165

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

GS881Z18CD

9 Mbit

130 mA, 155 mA

6.5 ns

512 k x 18

N/A

-

BGA-165

165

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302S09GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

995 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-48

48

16 Bit

3.6 V

表面贴装

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

-40 to 125 °C

GS74117AGX

Asynchronous

Memory & Data Storage

4 Mbit

1

130 mA

8 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

7 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x13)

165

活跃

Volatile

GSI Technology Inc.

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

BGA

1.52

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

1.8 V

GS8182T18BGD-300I

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

Tray

GS8182T18

-40 to 85 °C

-

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

SRAM - Synchronous, DDR II

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18Mbit

1

SYNCHRONOUS

300 MHz

SRAM

Parallel

Pipelined

1MX18

1.4 mm

18

-

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

1M x 18

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36E-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS8644Z36E

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 435 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

12 Weeks

YES

44

44

Non-Compliant

QFP, QFP44,.47SQ,32

FLATPACK

3

128000

PLASTIC/EPOXY

QFP44,.47SQ,32

-40 °C

未说明

10 ns

85 °C

无

GS72116AT-10I

131072 words

3.3 V

QFP

SQUARE

GSI技术

Obsolete

GSI TECHNOLOGY

5.77

QFP

3A991.B.2.B

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

未说明

1

0.8 mm

compliant

S-PQFP-G44

不合格

3.3 V

INDUSTRIAL

ASYNCHRONOUS

0.105 mA

128KX16

3-STATE

16

0.01 A

2

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

10 mm

10 mm