N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT37BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

670 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

BGA

5.21

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

400 MHz

GS8342T11BD-400I

无

85 °C

0.45 ns

未说明

-40 °C

BGA165,11X15,40

PLASTIC/EPOXY

4000000

GRID ARRAY, LOW PROFILE

LBGA, BGA165,11X15,40

Industrial grade

400 MHz

FBGA

-40 to 100 °C

Tray

GS8342T11BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

610 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

0.225 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

DDR

SigmaQuad-II

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182Q09BD-250I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

-40 to 85 °C

Tray

GS8182Q09BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

605 mA

Pipelined

2 M x 9

1.4 mm

9

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT10BGD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

555 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

Tray

GS8182Q08BGD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

510 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342S18BGD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

470 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

6.5 ns

85 °C

有

GS880F32CGT-6.5I

153 MHz

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

有

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS880F32CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

85 °C

-40 °C

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

160 mA

6.5 ns

256 k x 32

3-STATE

1.6 mm

32

18 b

SRAM

8 Mb

0.045 A

8388608 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182Q08BD-333

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

0 to 70 °C

Tray

GS8182Q08BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

70 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

860 mA

Pipelined

2 M x 8

1.4 mm

8

20 Bit

SRAM

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342S09BGD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

605 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

FBGA

1.8000 V

9 Bit

-40 to 85 °C

Tray

GS8182S09BGD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

525 mA

0.45

2 M x 9

20 b

SRAM

18 Mb

18

SRAM

无

N/A

-

BGA-165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

FBGA

-40 to 85 °C

Bulk

85 °C

-40 °C

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 b

18 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-119

YES

119

119

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.13

BGA

Compliant

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS88218CB-200

524288 words

2.5 V

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

130 mA, 155 mA

6.5 ns

512 k x 18

1.77 mm

18

19 b

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

表面贴装

1.9 V

36 Bit

1 MWords

Synchronous

1.7 V

1.8000 V

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342S36BD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Industrial grade

300 MHz

FBGA

-40 to 100 °C

Bulk

GS8342S36BD

3A991.B.2.B

SigmaSIO DDR-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

685 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.21 A

37748736 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881Z18CGT-150

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.51

QFP

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Tray

GS881Z18CGT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

512 k x 18

1.6 mm

18

18 b

SRAM

9 Mb

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 85 °C

Bulk

GS8161E32DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342R09BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

405 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

SMD/SMT

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342TT07BGD-300

300 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

DDR

SigmaDDR-II+

GSI技术

GSI技术

Parallel

Bulk

GS8342TT07BGD

3A991.B.2.B

SigmaDDR-II+ B2

85 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

450 mA

4 M x 8

3-STATE

1.4 mm

8

21 b

SRAM

36 Mb

36

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8161E32DD-200

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Compliant

SDR

SyncBurst

GSI技术

GSI技术

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 70 C

200 MHz

有

LBGA,

GRID ARRAY, LOW PROFILE

Bulk

GS8161E32DD

3A991.B.2.B

DCD Pipeline/Flow Through

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

210 mA

6.5 ns

512 k x 32

1.4 mm

32

19 b

SRAM

18 Mb

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

18

Tray

GS8182S18BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

485 mA

1 M x 18

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342R09BD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

525 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342DT38BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

860 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342TT06BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x13)

165

GSI Technology Inc.

85 °C

有

GS8162Z36DGD-250I

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.25

BGA

Tray

GS8162Z36

活跃

Volatile

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

-40°C ~ 100°C (TJ)

-

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18Mbit

SYNCHRONOUS

250 MHz

250 mA, 270 mA

5.5 ns

SRAM

Parallel

512 k x 36

1.4 mm

36

-

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

512K x 36

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

Details

DDR

Tray

GSI Technology Inc.

GS8182D36

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D36BGD-300I

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.65

BGA

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

-40°C ~ 85°C (TA)

Tray

GS8182D36BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

300 MHz

605 mA

SRAM

Parallel

512 k x 36

1.4 mm

36

-

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

512K x 36

15 mm

13 mm

N/A

-

6 Weeks

BGA-48

YES

48

48

-

+ 85 C

3.6 V

- 40 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

10 ns

85 °C

无

GS71116AU-10I

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.58

BGA

Industrial grade

FBGA

3.3000 V

Asynchronous

64 kWords

16 Bit

表面贴装

有

-40 to 85 °C

GS71116AU

无

3A991.B.2.B

Asynchronous

85 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

1 Mbit

1

ASYNCHRONOUS

105 mA

10 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

无