N/A

-

BGA-165

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

GS81302Q36E

144 Mbit

1.34 A

4 M x 36

N/A

-

8 Weeks

BGA-165

YES

100

100

GSI技术

GSI技术

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS881Z32CGD-150I

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.66

QFP

Compliant

有

150 MHz

NBT SRAM

SDR

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS881Z32CGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

150 mA, 160 mA

7.5 ns

256 k x 32

1.6 mm

32

18 b

SRAM

8 Mb

8388608 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T20GE

SigmaDDR-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

1.07 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

TSOP-44

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

GS74116AGP

Asynchronous

Memory & Data Storage

4 Mbit

105 mA

10 ns

256 k x 16

SRAM

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8662Q18BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.81

BGA

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8662Q18BD

e0

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn63Pb37)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

not_compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

930 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

165

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II+

Compliant

Industrial grade

-40 to 100 °C

Tray

GS81302D06E

100 °C

-40 °C

Memory & Data Storage

1.8 V

2

Pipelined

22 Bit

SRAM

144 Mb

Industrial

SRAM

无

N/A

-

TQFP-100

100

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 70 °C

70 °C

0 °C

9 Mbit

1

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Commercial

无

N/A

-

BGA-165

165

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

100 °C

-40 °C

1.8 V

144 Mbit

2

1.065 A

Pipelined

8 M x 18

21 Bit

144 Mbit

Industrial

N/A

-

9 Weeks, 4 Days

BGA-209

YES

209

209

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 85 C

3.6 V

0.887207 oz

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

-40 °C

未说明

6.5 ns

85 °C

无

GS832272C-250I

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.75

BGA

Industrial grade

-40 to 85 °C

Tray

GS832272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

8

SYNCHRONOUS

285 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.08 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

表面贴装

BGA-165

165-FPBGA (15x13)

GSI Technology Inc.

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Tray

GS8662Q

活跃

Compliant

有

333 MHz

+ 85 C

-40°C ~ 100°C (TJ)

Bulk

GS8662Q18BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.8 V

72 Mbit

2

333 MHz

930 mA

SRAM

Parallel

4 M x 18

-

21 b

SRAM

72 Mb

SRAM

4M x 18

无

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

10 ns

70 °C

有

GS84036AGT-150

150 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

8.47

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.28 mA

128KX36

3-STATE

1.6 mm

36

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS816032BGT-150

150 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.67

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

SYNCHRONOUS

0.205 mA

512KX32

3-STATE

1.6 mm

32

16777216 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8320Z36GT-250

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.66

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

1MX36

1.6 mm

36

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

表面贴装

YES

165

165

850 mA

Compliant

15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

5.68

BGA

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

LBGA

1.8 V

8388608 words

GS8662Q09GE-250

有

70 °C

0.45 ns

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

250 MHz

R-PBGA-B165

不合格

COMMERCIAL

2

SYNCHRONOUS

450 ps

8MX9

1.5 mm

9

22 b

72 Mb

75497472 bit

250 MHz

PARALLEL

Synchronous

9 b

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

YES

44

44

5.16

TSOP2

Compliant

0.400 INCH, TSOP2-44

SMALL OUTLINE, THIN PROFILE

3

256000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

10 ns

85 °C

无

GS74116ATP-10I

262144 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

未说明

1

0.8 mm

unknown

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

ASYNCHRONOUS

0.115 mA

256KX16

3-STATE

1.2 mm

16

0.02 A

4194304 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

12 Weeks

BGA-260

YES

260

2000000

PLASTIC/EPOXY

未说明

0.4 ns

无

GS8673ET36BK-500I

2097152 words

1.3 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.82

有

500 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

Tray

GS8673ET36BK

3A991.B.2.B

SigmaDDR-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

1.87 A

2 M x 36

2.3 mm

36

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

Compliant

85 °C

-40 °C

1.8 V

2

19 b

72 Mb

无

N/A

-

BGA-260

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

N

QDR-III

有

550 MHz

+ 85 C

1.4 V

Tray

GS8673EQ36BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

2.67 A

2 M x 36

SRAM

SRAM

N/A

-

BGA-260

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

N

QDR-III

有

675 MHz

+ 85 C

1.4 V

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

2.26 A

4 M x 18

SRAM

SRAM

N/A

-

Compliant

70 °C

0 °C

4

19 b

18 Mb

无

N/A

-

12 Weeks

BGA-260

YES

260

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

无

GS8673ET18BK-625

4194304 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.78

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

N

DDR-III

Tray

GS8673ET18BK

3A991.B.2.B

SigmaDDR-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

1.65 A

4 M x 18

2.3 mm

18

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

12 Weeks

YES

260

未说明

0.4 ns

无

GS8673EQ18BK-625I

4194304 words

1.35 V

HBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.78

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

SYNCHRONOUS

4MX18

2.3 mm

18

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

2.3, 3 V

Synchronous

72 Bit

2.7, 3.6 V

NBT SRAM

Details

SDR

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

- 40 C

3.6 V

+ 85 C

167 MHz

有

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA209,11X19,40

-40 °C

未说明

8 ns

85 °C

有

GS8642Z72GC-167I

167 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

2.5, 3.3 V

-40 to 85 °C

Tray

GS8642Z72GC

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

280 mA, 360 mA

8@Flow-Through/3.5@P

1 M x 72

3-STATE

1.7 mm

72

SRAM

0.12 A

72

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

有

375 MHz

+ 125 C

1.9 V

- 55 C

15

Tray

GS8672Q19BE

SigmaQuad-II+ ECCRAM

Memory & Data Storage

72 Mbit

4 M x 18

SRAM

72

SRAM

N/A

-

12 Weeks

TQFP-100

YES

100

100

2.7, 3.6 V

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS84036CGT-200

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

200 MHz

TQFP

2.5, 3.3 V

2.3, 3 V

Synchronous

128 kWords

36 Bit

-40 to 100 °C

Tray

GS84036CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

4 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5

128 k x 36

1.6 mm

36

SRAM

4

PARALLEL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm