N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D37E

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.065 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS88218CGD-150

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS88218CGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

512 k x 18

1.4 mm

18

19 b

SRAM

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

133.3@Flow-Through/150@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

150 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 70 °C

Tray

GS8644Z36GE

NBT

70 °C

0 °C

Memory & Data Storage

72 Mbit

4

245 mA, 295 mA

7.5@Flow-Through/3.8

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

Tray

GS81302D38E

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.67 A

4 M x 36

20 b

SRAM

144 Mb

SRAM

无

N/A

-

TQFP-100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200 MHz

0 to 70 °C

GS88037CGT

70 °C

0 °C

9 Mbit

1

170 mA

Pipelined

256 k x 36

18 Bit

9 Mbit

Commercial

无

N/A

-

12 Weeks

BGA-165

YES

165

165

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

BGA

5.06

GSI TECHNOLOGY

不推荐

RECTANGULAR

LBGA

1.8 V

4194304 words

GS81302TT37GE-400

有

70 °C

0.45 ns

未说明

PLASTIC/EPOXY

4000000

3

400 MHz

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

0 to 85 °C

Tray

GS81302TT37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

995 mA

0.45

4 M x 36

1.5 mm

36

SRAM

144

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

12 Weeks

BGA-260

YES

260

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8673ED36BGK-500

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Commercial grade

500 MHz

1.3, 1.35 V

Synchronous

2 MWords

36 Bit

表面贴装

有

500 MHz

+ 85 C

0 to 70 °C

Tray

GS8673ED36BGK

3A991.B.2.B

SigmaQuad-IIIe B4

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

1

SYNCHRONOUS

2.44 A

Pipelined

2 M x 36

2.3 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT20E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.08 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

DDR

-40 to 100 °C

144 Mbit

1

905 mA

Pipelined

16 M x 9

23 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 70 °C

Tray

GS81302T10E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS816118DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS881E32CGD-250I

262144 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

175 mA, 215 mA

5.5 ns

256 k x 32

1.4 mm

32

SRAM

8388608 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

DDR

Military grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8662Q36BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

1.225 A

Pipelined

2 M x 36

21 Bit

SRAM

72 Mb

Military

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302T19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36GE-250I

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Industrial grade

-40 to 85 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 435 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.16 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

QDR-II

Military grade

300 MHz

BGA

QDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS81302Q19E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

BGA-48

48

表面贴装

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

16 Bit

3.6 V

-40 to 125 °C

GS74117AGX

Asynchronous

Memory & Data Storage

4 Mbit

1

90 mA

12 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T20BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

810 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

66

0 C

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

SDR

Details

SyncBurst

0 to 70 °C

Tray

GS881E18CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS816136DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302R09GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

810 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

500 MHz

有

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

DDR

N

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8342TT11BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

730 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

YES

165

165

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T37BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

-40 to 100 °C

e0

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

1

SYNCHRONOUS

0.78 mA

Pipelined

1MX36

3-STATE

1.4 mm

36

19 Bit

36 Mbit

0.225 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm