GSI Technology GS81302Q19E-300M
- 收藏
- 对比
GS81302Q19E-300M
2984-GS81302Q19E-300M
存储器
BGA-165
大陆
立即发货

GS81302Q19E-300M datasheet pdf and Memory product details from GSI Technology stock available at utmel
1最小包装量--
GS81302Q19E-300M详情
GSI Technology GS81302Q19E-300M重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
引脚数
165
Maximum Clock Rate
300 MHz
Supplier Package
BGA
Data Rate Architecture
QDR
Typical Operating Supply Voltage
1.8000 V
Timing Type
Synchronous
Number of Words
8 MWords
Number of I/O Lines
18 Bit
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
300 MHz
Maximum Operating Temperature
+ 125 C
Supply Voltage-Max
1.9 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SigmaQuad-II+
Memory Types
QDR-II
Usage Level
Military grade
系列
GS81302Q19E
包装
Tray
类型
SigmaQuad-II+ B2
子类别
Memory & Data Storage
内存大小
144 Mbit
建筑学
Pipelined
组织结构
8 M x 18
地址总线宽度
23 Bit
产品类别
SRAM
密度
144 Mbit
筛选水平
Military
产品类别
SRAM
GS81302Q19E-300M拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。