N/A

-

YES

165

165

3

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS882Z36BD-200

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.67

BGA

LBGA,

GRID ARRAY, LOW PROFILE

e0

3A991.B.2.B

锡铅

FLOW-THROUGH OR PIPELINED ARCHITECTURE; IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

unknown

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

512KX36

1.4 mm

36

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

12 Weeks

YES

119

119

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS78108AGB-8I

1048576 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

e1

有

3A991.B.2.B

锡银铜

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

1MX8

1.99 mm

8

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

YES

100

100

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8160F36BGT-5.5I

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.77

QFP

LQFP,

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

SYNCHRONOUS

512KX36

1.6 mm

36

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

YES

100

100

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8320Z18GT-200I

QFP

5.68

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

LQFP

2.5 V

2097152 words

LQFP,

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

SYNCHRONOUS

2MX18

1.6 mm

18

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

6 Weeks

YES

119

119

3

128000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS73024AGB-8

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

BGA

14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

网格排列

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

128KX24

1.99 mm

24

3145728 bit

PARALLEL

标准SRAM

3.6 V

3.135 V

22 mm

14 mm

N/A

-

YES

165

165

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS816136BGD-150I

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.6

BGA

LBGA,

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

unknown

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

512KX36

1.4 mm

36

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

6 Weeks

YES

119

119

BGA

RECTANGULAR

GSI技术

Obsolete

GS73024AGB-10

有

70 °C

10 ns

未说明

PLASTIC/EPOXY

128000

3

网格排列

14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

GSI TECHNOLOGY

5.71

BGA

131072 words

3.3 V

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

128KX24

1.99 mm

24

3145728 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

6 Weeks

YES

48

48

3

512000

PLASTIC/EPOXY

未说明

10 ns

70 °C

无

GS74108AX-10

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

无

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

25 Weeks, 5 Days

YES

119

119

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

无

GS78108AB-10I

1048576 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

e0

无

3A991.B.2.B

锡铅

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

1MX8

1.99 mm

8

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

12 Weeks

YES

119

119

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS78108AB-8I

1048576 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

e0

无

3A991.B.2.B

锡铅

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

1MX8

1.99 mm

8

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

25 Weeks, 5 Days

YES

119

119

3

512000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS78116AB-8

524288 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.22

BGA

BGA,

网格排列

e0

无

3A991.B.2.B

锡铅

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

512KX16

1.99 mm

16

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

6 Weeks

YES

44

44

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

有

GS74104AGP-12I

1048576 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

TSOP2

TSOP2,

SMALL OUTLINE, THIN PROFILE

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

ASYNCHRONOUS

1MX4

1.2 mm

4

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

6 Weeks

YES

48

48

3

512000

PLASTIC/EPOXY

未说明

12 ns

70 °C

有

GS74108AGX-12

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

Compliant

85 °C

-40 °C

3.3 V

1

19 b

8 Mb

无

N/A

-

Compliant

70 °C

0 °C

3.3 V

1

19 b

8 Mb

无

N/A

-

Compliant

85 °C

-40 °C

3.3 V

4

17 b

4 Mb

无

N/A

-

表面贴装

YES

165

165

810 mA

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8342Q36AE-250I

1048576 words

1.8 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.8

BGA

Compliant

BGA,

无

3A991.B.2.B

85 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

250 MHz

R-PBGA-B165

不合格

INDUSTRIAL

2

SYNCHRONOUS

450 ps

1MX36

1.5 mm

36

19 b

36 Mb

37748736 bit

PARALLEL

Synchronous

36 b

DDR SRAM

1.95 V

1.7 V

17 mm

15 mm

无

N/A

-

6 Weeks

YES

44

44

SMALL OUTLINE, THIN PROFILE

3

1000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS74104AGP-8

1048576 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

TSOP2

5.33

Compliant

TSOP2,

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

8542.32.00.41

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

COMMERCIAL

4

ASYNCHRONOUS

1MX4

1.2 mm

4

20 b

4 Mb

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

无

N/A

-

6 Weeks

YES

119

119

14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

网格排列

3

128000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

有

GS73024AGB-12I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.83

BGA

Compliant

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX24

1.99 mm

24

17 b

3 Mb

3145728 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

无

N/A

-

25 Weeks, 5 Days

YES

119

119

网格排列

3

256000

PLASTIC/EPOXY

未说明

12 ns

70 °C

无

GS76024AB-12

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.24

BGA

Compliant

BGA,

e0

无

3A991.B.2.B

锡铅

70 °C

0 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

1

ASYNCHRONOUS

256KX24

1.99 mm

24

18 b

6 Mb

6291456 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

无

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

8 ns

85 °C

有

GS84032AGT-180I

180 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.67

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

SYNCHRONOUS

0.345 mA

128KX32

3-STATE

1.6 mm

32

0.03 A

4194304 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

6 Weeks

YES

44

44

3

512000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

有

GS74108AGP-12I

524288 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.32

TSOP2

TSOP2,

SMALL OUTLINE, THIN PROFILE

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

25 Weeks, 5 Days

YES

119

119

3

256000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

无

GS76024AB-12I

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

e0

无

3A991.B.2.B

锡铅

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

256KX24

1.99 mm

24

6291456 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

6 Weeks

YES

48

48

3

512000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS74108AGX-8I

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS816036BGT-150I

150 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.69

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

unknown

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

SYNCHRONOUS

0.215 mA

512KX36

3-STATE

1.6 mm

36

0.05 A

18874368 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm