N/A

-

BGA-48

3.6 V

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

GS71116AU

Asynchronous

Memory & Data Storage

1 Mbit

15 ns

64 k x 16

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302T38GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.19 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-119

YES

119

未说明

4.5 ns

85 °C

有

GS81282Z18GB-333V

8388608 words

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.68

Details

333 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

BGA,

网格排列

8000000

PLASTIC/EPOXY

0 to 85 °C

Tray

GS81282Z18GB

NBT Pipeline/Flow Through

IT ALSO OPERATES AT 2.5 V NOMINAL SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

OTHER

144 Mbit

SYNCHRONOUS

400 mA, 530 mA

4.5 ns

8 M x 18

1.99 mm

18

150994944 bit

PARALLEL

ZBT SRAM

2 V

1.7 V

22 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

FPBGA

1.8000 V

1.7 V

Synchronous

8 MWords

36 Bit

1.9 V

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

85 °C

有

GS82582QT37GE-333

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.59

Details

333 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

0 to 85 °C

Tray

GS82582QT37GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

OTHER

288 Mbit

SYNCHRONOUS

1.11 A

0.45

8 M x 36

1.5 mm

36

288

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

1.9 V

表面贴装

1.9 V

Commercial grade

Details

450 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

DDR

有

15

SigmaQuad-II+

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

0 to 85 °C

Tray

GS8662D20BGD

SigmaQuad-II+

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Commercial

N/A

-

BGA-260

260

1.35 V

表面贴装

1.35 V

Industrial grade

Parallel

1.2 V

Details

714 MHz

- 40 C

+ 100 C

SMD/SMT

DDR

有

10

SigmaQuad-IIIe

714 MHz

BGA

DDR

1.3000 V

1.2 V

Synchronous

8 MWords

18 Bit

-40 to 100 °C

Tray

GS81313LQ18GK

SigmaQuad-IIIe B2

144 Mbit

1

1.7 A

8 M x 18

21 Bit

144 MB

Industrial

N/A

-

BGA-260

YES

260

260

有

10

SigmaQuad-IIIe

500 MHz

FBGA

DDR

1.3000 V

1.25 V

Synchronous

16 MWords

18 Bit

1.35 V

表面贴装

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

16000000

PLASTIC/EPOXY

未说明

有

GS82583ED18GK-500I

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Industrial grade

Details

500 MHz

Parallel

1.25 V

- 40 C

+ 100 C

SMD/SMT

QDR-III

-40 to 100 °C

Tray

GS82583ED18GK

e1

3A991.B.2.B

SigmaQuad-IIIe B4

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

288 Mbit

1

SYNCHRONOUS

1.2 A

16 M x 18

2.3 mm

18

22 Bit

288 Mbit

301989888 bit

Industrial

PARALLEL

QDR SRAM

1.25 V

1.15 V

22 mm

14 mm

N/A

-

BGA-165

165

1.9 V

表面贴装

1.9 V

Industrial grade

- 40 C

+ 85 C

SMD/SMT

DDR-II

有

10

SigmaDDR-II+

Details

350 MHz

Parallel

1.7 V

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

-40 to 100 °C

Tray

GS81302TT19GE

SigmaDDR-II+ B2

144 Mbit

1

810 mA

Pipelined

8 M x 18

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D08GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

995 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS881E18CGT-150IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS881E18CGT

e3

有

3A991.B.2.B

DCD Pipeline/Flow Through

Matte Tin (Sn)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

GS8321Z32AD-375

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

375 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

238@Flow-Through/375@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

32 Bit

2.7, 3.6 V

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

85 °C

无

0 to 85 °C

GS8321Z32AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

SYNCHRONOUS

270 mA, 380 mA

4.2@Flow-Through/2.5

1MX32

1.4 mm

32

36

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

250@Flow-Through/400@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

0 to 85 °C

Tray

GS832118AD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

265 mA, 355 mA

4@Flow-Through/2.5@P

2 M x 18

SRAM

36

SRAM

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

表面贴装

2.7, 3.6 V

72 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

117.6@Flow-Through/150@Pipelined MHz

有

150 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS8322Z72C

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

8

220 mA, 280 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

4 MWords

18 Bit

2, 2.7 V

表面贴装

SDR

FBGA

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS8642Z18B-167IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS8642Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

表面贴装

2, 2.7 V

72 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 85 °C

Tray

GS832272GC

同步突发

Memory & Data Storage

36 Mbit

8

285 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

165

165

70 °C

无

GS8182T09BD-400

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.33

BGA

Commercial grade

表面贴装

1.9 V

9 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

400 MHz

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX9

1.4 mm

9

20 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS88136CD-150IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS88136CD

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

66

- 40 C

2.7 V

+ 85 C

200 MHz

有

LQFP,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS88136CD-200IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS88136CD

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

TQFP

SDR

-40 to 85 °C

GS864032GT

72 Mbit

4

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

64 Mbit

Industrial

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 85 °C

Tray

GS832236AGB

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 70 °C

Tray

GS81302D10E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

表面贴装

2, 2.7 V

18 Bit

2 MWords

Synchronous

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

有

GS832118AGD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS832118AGD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4 ns

70 °C

有

GS832218AGD-400

400 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

0 to 85 °C

Tray

GS832218AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm