N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D20BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

855 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS88218CGD-200I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS88218CGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

150 mA, 175 mA

6.5 ns

512 k x 18

1.4 mm

18

19 b

SRAM

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SigmaQuad-II

DDR

Compliant

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342Q18BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

955 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

表面贴装

2, 2.7 V

36 Bit

1 MWords

Synchronous

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8321E36AD

同步突发

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881Z18CD

NBT

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 70 °C

Tray

GS881Z18CGD

NBT

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

125 mA, 165 mA

5.5@Flow-Through/3@P

512 k x 18

18 b

SRAM

9 Mb

9

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

705 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Compliant

Commercial grade

0 to 70 °C

70 °C

0 °C

1.8 V

1

Pipelined

19 Bit

18 Mbit

Commercial

无

N/A

-

165

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

2

Pipelined

22 Bit

72 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS864236B-300

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS864236B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

300 mA, 420 mA

5.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-209

YES

209

209

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS8322Z72C-166IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

125@Flow-Through/166@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS8322Z72C

无

3A991.B.2.B

NBT

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

36 Mbit

8

SYNCHRONOUS

235 mA, 300 mA

8 ns

Flow-Through/Pipelined

512 k x 72

1.7 mm

72

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SigmaSIO DDR-II

DDR

Compliant

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662S08BD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

640 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS816118DGD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

YES

100

100

5.35

QFP

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

8 ns

85 °C

有

GS840H32AGT-180I

180 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

e3

有

3A991.B.2.B

纯哑光锡

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4

SYNCHRONOUS

0.345 mA

128KX32

3-STATE

1.6 mm

32

17 b

4 Mb

0.03 A

4194304 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

无

N/A

-

BGA-165

165

4 MWords

18 Bit

表面贴装

Compliant

550 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 100 °C

100 °C

-40 °C

1.8 V

72 Mbit

1

840 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662T37BGD-300I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.44

BGA

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

Tray

GS8662T37BGD

3A991.B.2.B

SigmaDDR-II+ B2

100 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

635 mA

Pipelined

2 M x 36

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

200@Flow-Through/333@Pipelined MHz

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

85 °C

有

GS832036AGT-333V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.7

QFP

Commercial grade

表面贴装

2, 2.7 V

36 Bit

1 MWords

0 to 85 °C

Tray

GS832036AGT

3A991.B.2.B

同步突发

85 °C

0 °C

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

8 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342D08BD-400I

400 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

Tray

GS8342D08BD

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

715 mA

0.45

4 M x 8

3-STATE

1.4 mm

8

20 b

SRAM

36 Mb

0.235 A

36

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

YES

165

165

70 °C

无

GS8182T37BD-435

435 MHz

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.47

BGA

Commercial grade

435 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

1

SYNCHRONOUS

0.75 mA

0.45

512KX36

3-STATE

1.4 mm

36

18 b

18 Mb

0.19 A

18

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302Q10GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

885 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

0 to 85 °C

Bulk

GS8662TT07BGD

85 °C

0 °C

1.8 V

72 Mbit

1

495 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

表面贴装

Compliant

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS88136CGT-200V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

0 to 70 °C

GS88136CGT

3A991.B.2.B

70 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

无

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Military grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 125 C

3.6 V

- 55 C

42

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS88236CB

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Military

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8662Q10BD-357I

357 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

357 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8662Q10BD

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

995 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

22 Bit

SRAM

72 Mbit

0.285 A

75497472 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

222.2@Flow-Through/333@Pipelined MHz

TQFP

2.5, 3.3 V

2.3, 3 V

18 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 70 °C

Tray

GS88018CGT

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

165 mA, 220 mA

4.5@Flow-Through/2.5

512 k x 18

19 Bit

SRAM

9

SRAM