GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	引脚数量	JESD-30代码	资历状况	电源电压-最大值(Vsup)	电源	温度等级	电源电压-最小值(Vsup)	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	产品类别
GS8644Z36E-225IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	36 Bit	2, 2.7 V	表面贴装	有	225 MHz	+ 85 C	2.7 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA	5.29	GSI TECHNOLOGY	活跃	RECTANGULAR	LBGA	1.8 V	GS8644Z36E-225IV	有	85 °C	6.5 ns	未说明	-40 °C	PLASTIC/EPOXY	2000000	3	GRID ARRAY, LOW PROFILE	LBGA,	Industrial grade	153.8@Flow-Through/225@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS8644Z36E	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	不合格	2 V		INDUSTRIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	295 mA, 405 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36		1.5 mm	36	21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		ZBT SRAM		SRAM	17 mm	15 mm
GS8662Q37BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	1.8000 V	1.7 V	Synchronous	2 MWords	36 Bit	1.9 V	表面贴装	300 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				300 MHz	FBGA	QDR	-40 to 100 °C																		165							72 Mbit	2		1.07 A		Pipelined	2 M x 36				20 Bit		72 Mbit			Industrial
GS8162Z18DB-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	Industrial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 85 C	2.7 V	- 40 C	21	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8162Z18DB				NBT Pipeline/Flow Through				Memory & Data Storage								119							18 Mbit	2		240 mA, 300 mA	5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial					SRAM
GS8662Q10BD-357I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	357 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8662Q10BD-357I	357 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	BGA	Industrial grade	357 MHz	FBGA	QDR	-40 to 100 °C	Tray	GS8662Q10BD			3A991.B.2.B	SigmaQuad-II+ B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	不合格	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	995 mA		Pipelined	8 M x 9	3-STATE	1.4 mm	9	22 Bit	SRAM	72 Mbit	0.285 A	75497472 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8182R18BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1
GS88018CGT-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100		222.2@Flow-Through/333@Pipelined MHz	TQFP	2.5, 3.3 V	2.3, 3 V	18 Bit	2.7, 3.6 V	有	333 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR			0 to 70 °C	Tray	GS88018CGT				Pipeline/Flow Through				Memory & Data Storage								100							9 Mbit			165 mA, 220 mA	4.5@Flow-Through/2.5		512 k x 18				19 Bit	SRAM			9						SRAM
GS880Z18CGT-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	512 kWords	Synchronous	1.7, 2.3 V	1.8, 2.5 V	SDR	TQFP	有	250 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	512000	UNSPECIFIED	-40 °C	未说明	85 °C	有	GS880Z18CGT-250IV	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	QFP	Industrial grade	181.8@Flow-Through/250@Pipelined MHz	表面贴装	2, 2.7 V	18 Bit	-40 to 85 °C	Tray	GS880Z18CGT			3A991.B.2.B	NBT		PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	100	R-XQFP-G100	不合格	2 V		INDUSTRIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	145 mA, 185 mA	5.5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm
GS8161Z32DGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	0 to 70 °C	Tray	GS8161Z32DGD				NBT				Memory & Data Storage								165							18 Mbit	4		260 mA, 315 mA	4.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Commercial					SRAM
GS8644Z36E-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	- 40 C	15	1.7 V	-40 to 85 °C	Tray	GS8644Z36E				NBT				Memory & Data Storage								165							72 Mbit	4		270 mA, 330 mA	8.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Industrial					SRAM
GS8644Z36E-166IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	7 ns	85 °C	有	GS8644Z36E-166IV	2097152 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	BGA	有	166 MHz	+ 85 C	2.7 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM		Tray	GS8644Z36E	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	不合格	2 V		INDUSTRIAL	1.7 V	72 Mbit		SYNCHRONOUS	285 mA, 345 mA	8 ns		2 M x 36		1.5 mm	36		SRAM			72		PARALLEL		ZBT SRAM		SRAM	17 mm	15 mm
GS8161E32DGT-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	NBT SRAM	Details	SDR				有	375 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS8161E32DGT				DCD Pipeline/Flow Through				Memory & Data Storage															18 Mbit			290 mA, 370 mA	4.2 ns		512 k x 32					SRAM									SRAM
GS864418E-133	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	4 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	133 MHz	+ 70 C	3.6 V	0 C	15	2.3 V	SMD/SMT	Parallel	0 to 70 °C	Tray	GS864418E				同步突发				Memory & Data Storage								165							72 Mbit	2		210 mA, 250 mA	8.5 ns	Flow-Through/Pipelined	4 M x 18					SRAM	72 Mbit			Commercial					SRAM
GS832236AB-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	BGA, BGA119,7X17,50	网格排列	1000000	PLASTIC/EPOXY	BGA119,7X17,50	-40 °C	未说明	5.5 ns	85 °C	无	GS832236AB-250IV	250 MHz	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Industrial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS832236AB	e0	无	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	119	R-PBGA-B119	不合格	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS	260 mA, 315 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	缓存SRAM	1.7 V	SRAM	22 mm	14 mm
GS8662T08BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662T08BD				SigmaDDR-II B2				Memory & Data Storage								165							72 Mbit	1		495 mA		Pipelined	8 M x 8				22 Bit	SRAM	72 Mbit			Commercial					SRAM
GS864032GT-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	3.3000 V	3 V	Synchronous	2 MWords	32 Bit	3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	0 to 70 °C	Tray	GS864032GT				Pipeline/Flow Through				Memory & Data Storage								100							72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 32				21 Bit	SRAM	64 Mbit			Commercial					SRAM
GS816136DD-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	0 to 70 °C	Tray	GS816136DD				Pipeline/Flow Through				Memory & Data Storage								165							18 Mbit	4		270 mA, 350 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
GS8662D07BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662D07BGD				SigmaQuad-II+ B4				Memory & Data Storage								165							72 Mbit	2		640 mA		Pipelined	8 M x 8				21 Bit	SRAM	72 Mbit			Industrial					SRAM
GS81302DT07E-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II	Industrial grade				450 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	450 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302DT07E				SigmaQuad-II+ B4				Memory & Data Storage								165							144 Mbit	2		1.185 A		Pipelined	16 M x 8				22 Bit	SRAM	144 Mbit			Industrial					SRAM
GS8662D06BGD-550	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SigmaQuad-II+	Details	DDR				有	550 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS8662D06BGD				SigmaQuad-II+				Memory & Data Storage															72 Mbit			890 mA			8 M x 8					SRAM			72						SRAM
GS840H18AGB-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	119	网格排列	3	256000	PLASTIC/EPOXY	-40 °C	未说明	10 ns	85 °C	有	GS840H18AGB-150I	262144 words	3.3 V	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.21	BGA			BGA,				e1	有	3A991.B.2.B		锡银铜	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	不合格	3.6 V		INDUSTRIAL	3 V			SYNCHRONOUS				256KX18		2.19 mm	18					4718592 bit		PARALLEL		缓存SRAM			22 mm	14 mm
GS8342T07BGD-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SigmaDDR-II+	Details	DDR	Industrial grade				450 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	8 Bit	表面贴装	有	450 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8342T07BGD				SigmaDDR-II+ B2				Memory & Data Storage								165							36 Mbit	1		680 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial					SRAM
GS832236AD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	4.5 ns	70 °C	无	GS832236AD-333	333 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	222@Flow-Through/333@Pipelined MHz	FBGA	0 to 85 °C	Tray	GS832236AD	e0	无	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	165	R-PBGA-B165	不合格	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	260 mA, 345 mA	4.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	SRAM	15 mm	13 mm
GS81302S08GE-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	Details	DDR-II	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302S08GE				SigmaSIO DDR-II				Memory & Data Storage								165							144 Mbit	2		890 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mb			Commercial					SRAM
GS881Z18CGD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	0 to 70 °C	Tray	GS881Z18CGD				NBT Pipeline/Flow Through				Memory & Data Storage								165							9 Mbit	1		120 mA, 130 mA	7.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Commercial					SRAM
GS81302TT10E-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR-II	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302TT10E				SigmaDDR-II+ B2				Memory & Data Storage								165							144 Mbit	1		800 mA		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Commercial					SRAM