N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

333 MHz

DDR

N

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8662Q08BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

920 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS8640FZ18GT

NBT

Memory & Data Storage

72 Mbit

1

215 mA

8 ns

Flow-Through

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS81302Q37GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

930 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8342TT19BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

36 Bit

2, 2.7 V

有

150 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS882Z36CB-150IV

262144 words

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

133.3@Flow-Through/150@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS882Z36CB

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

130 mA, 145 mA

7.5@Flow-Through/3.8

256 k x 36

1.77 mm

36

SRAM

9

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

375 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

-40 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

DDR

N

SigmaSIO DDR-II

GSI技术

GSI技术

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662S36BD-350

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

BGA

Commercial grade

350 MHz

FBGA

0 to 85 °C

Tray

GS8662S36BD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

885 mA

Pipelined

2 M x 36

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

DDR

有

550 MHz

+ 70 C

1.9 V

0 to 85 °C

Tray

GS8342TT06BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

800 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS8662QT10BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

860 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8662S08BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

4 MWords

18 Bit

3.6 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8640E18GT-300I

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.56

QFP

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

3.3000 V

3 V

Synchronous

-40 to 85 °C

GS8640E18GT

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

290 mA, 390 mA

5.5 ns

Flow-Through/Pipelined

4MX18

1.6 mm

18

22 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8662D37BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

2 M x 36

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

未说明

4.5 ns

70 °C

无

GS882Z18CB-333

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS882Z18CB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

165 mA, 220 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

70 °C

无

GS8182T08BD-400

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.32

BGA

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX8

1.4 mm

8

20 Bit

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342DT07BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

715 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.9 V

+ 70 C

450 MHz

FBGA

1.8000 V

1.7 V

8 MWords

9 Bit

1.9 V

有

450 MHz

DDR

Details

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

0 to 85 °C

Tray

GS8662TT10BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

695 mA

0.45

8 M x 9

SRAM

72

SRAM

N/A

-

YES

119

119

网格排列

3

256000

PLASTIC/EPOXY

未说明

12 ns

70 °C

有

GS840H18AGB-100

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

BGA,

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

256KX18

2.19 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

表面贴装

2, 2.7 V

18 Bit

4 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

117.6@Flow-Through/133@Pipelined MHz

有

133 MHz

+ 85 C

2.7 V

- 40 C

15

-40 to 85 °C

Tray

GS864418E

同步突发

Memory & Data Storage

72 Mbit

2

235 mA, 285 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662T11BD-450

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.5

BGA

Commercial grade

450 MHz

FBGA

0 to 85 °C

Tray

GS8662T11BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

695 mA

Pipelined

8 M x 9

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

0 to 70 °C

GS882Z18CGD

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342T19BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

610 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS882Z18CGD-300I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.57

BGA

Industrial grade

-40 to 85 °C

Tray

GS882Z18CGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662TT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 70 C

3.6 V

0 C

0 to 70 °C

Tray

GS864418GE

同步突发

70 °C

0 °C

Memory & Data Storage

72 Mbit

2

210 mA, 250 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无