N/A

-

BGA-165

165

1.8000 V

1.7 V

36 Bit

1.9 V

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

FBGA

-40 to 85 °C

Tray

GS8342D38BGD

SigmaQuad-II+

85 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.125 A

0.45

1 M x 36

18 b

SRAM

36 Mb

36

SRAM

无

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

-40 to 100 °C

Tray

GS8342D07BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

715 mA

0.45

4 M x 8

20 b

SRAM

36 Mb

36

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

UNSPECIFIED

未说明

70 °C

有

GS880Z18CGT-200V

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

Tray

GS880Z18CGT

3A991.B.2.B

NBT

70 °C

0 °C

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

512 k x 18

1.6 mm

18

18 b

SRAM

9 Mb

9437184 bit

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

TQFP-100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

-40 to 85 °C

85 °C

-40 °C

9 Mbit

1

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662T08BD-350I

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

350 MHz

-40 to 100 °C

Tray

GS8662T08BD

3A991.B.2.B

SigmaDDR-II B2

100 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

600 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

22 Bit

SRAM

72 Mbit

67108864 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

375 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

238@Flow-Through/375@Pipelined MHz

0 to 70 °C

Bulk

GS8161Z36DGD

70 °C

0 °C

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

165

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Compliant

Industrial grade

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 85 C

1.9 V

- 40 C

DDR

SigmaDDR-II+

-40 to 100 °C

Tray

GS8342TT07BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-209

YES

209

209

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

未说明

6.5 ns

70 °C

有

GS832272GC-250

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

0 to 70 °C

Tray

GS832272GC

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

锡银铜

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.06 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

YES

165

165

Non-Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662R36BD-333I

333 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

SYNCHRONOUS

0.695 mA

2MX36

3-STATE

1.4 mm

36

75497472 bit

PARALLEL

COMMON

标准SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

5 ns

70 °C

无

GS8322Z18AB-333V

333 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS8322Z18AB

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662S08BGD-400I

8388608 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.71

BGA

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Bulk

GS8662S08BGD

3A991.B.2.B

SigmaSIO DDR-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

745 mA

8 M x 8

1.4 mm

8

22 b

SRAM

72 Mb

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

7.5 ns

85 °C

无

GS8322Z36AD-150IV

150 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8322Z36AD

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 100 °C

Bulk

GS8162Z36DD

NBT Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

YES

144

144

GS4288S09L-33

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.7

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

32000000

PLASTIC/EPOXY

未说明

无

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

300 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 70 C

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

4.5 ns

85 °C

有

GS8162Z18DGD-333

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Bulk

GS8162Z18DGD

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

18 Mbit

2

SYNCHRONOUS

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662R18BD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-209

209

SDR

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

72 Bit

2.7, 3.6 V

有

167 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

-40 to 85 °C

Tray

GS864272GC

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

8

280 mA, 360 mA

8@Flow-Through/3.5@P

1 M x 72

20 b

SRAM

72 Mb

72

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

435 MHz

+ 125 C

1.9 V

- 55 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8182D37BD-435M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.78

BGA

Military grade

435 MHz

BGA

QDR

-55 to 125 °C

Tray

GS8182D37BD

3A991.B.2.B

SigmaQuad II+

125 °C

-55 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

MILITARY

18 Mbit

2

SYNCHRONOUS

Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Military

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 100 °C

Bulk

GS8321E18AGD

同步突发

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

205 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Industrial

SRAM

无

N/A

-

10 Weeks

YES

165

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-55 °C

0.45 ns

125 °C

无

GS8342Q36AE-250M

250 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.8

BGA

Compliant

Bulk

3A991.B.2.B

125 °C

-55 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

unknown

R-PBGA-B165

不合格

1.5/1.8,1.8 V

MILITARY

2

SYNCHRONOUS

0.85 mA

1MX36

3-STATE

1.5 mm

36

19 b

36 Mb

0.3 A

36

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS88236CD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

250 MHz

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

Compliant

250 MHz

0 to 85 °C

GS8662T09BGD

85 °C

0 °C

1.8 V

72 Mbit

1

425 mA

0.45

8 M x 9

22 b

72 Mb

72

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T09BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

435 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

142.8@Flow-Through/166@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

0 to 70 °C

Tray

GS864418GE

同步突发

70 °C

0 °C

Memory & Data Storage

72 Mbit

2

240 mA, 285 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662TT11BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

625 mA

Pipelined

8 M x 9

22 b

SRAM

72 Mbit

Commercial

SRAM

无