N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

3

BGA

4.65

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

1048576 words

GS8182T18BGD-300

有

70 °C

0.45 ns

未说明

PLASTIC/EPOXY

1000000

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

LBGA,

Tray

GS8182T18BGD

e1

有

3A991.B.2.B

SigmaDDR-II B2

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

1

SYNCHRONOUS

405 mA

450 ps

1 M x 18

1.4 mm

18

20 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

表面贴装

BGA-119

119

119-FPBGA (22x14)

GSI Technology Inc.

GS8322Z

活跃

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

-40 to 100 °C

Tray

GS8322Z36AGB

NBT

Memory & Data Storage

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

36 Mbit

250 MHz

260 mA, 315 mA

5.5@Flow-Through/3@P

SRAM

Parallel

1 M x 36

-

SRAM

36

SRAM

1M x 36

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

14

GSI Technology Inc.

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8642Z

活跃

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

5.5 ns

85 °C

有

GS8642Z36GB-300I

300 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

FBGA

SDR

-40 to 85 °C

Tray

GS8642Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

300 MHz

320 mA, 440 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

-

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

2M x 36

22 mm

14 mm

N/A

-

表面贴装

165-LBGA

165

165-FPBGA (13x15)

GSI Technology Inc.

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Tray

GS8321Z

活跃

Volatile

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

FBGA

-40 to 100 °C

-

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

36Mbit

4

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

-

36 Mbit

Industrial

1M x 36

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

18

GSI Technology Inc.

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS832036

活跃

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

4.5 ns

有

GS832036AGT-333I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.66

QFP

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

-40 to 100 °C

Tray

GS832036AGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

-

20 b

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

1M x 36

20 mm

14 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8161Z36DGD-250IV

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

250 MHz

-40 to 100 °C

3A991.B.2.B

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

表面贴装

TQFP-100

100

100-TQFP (20x14)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Tray

GS8320Z

活跃

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Bulk

GS8320Z36AGT

NBT

100 °C

-40 °C

Memory & Data Storage

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

36 Mbit

4

333 MHz

290 mA, 375 mA

5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

-

20 Bit

SRAM

36 Mbit

Industrial

SRAM

1M x 36

无

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8182Q18

活跃

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8182Q18BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

18 Mbit

2

333 MHz

870 mA

SRAM

Parallel

Pipelined

1 M x 18

-

19 Bit

SRAM

18 Mbit

Industrial

SRAM

1M x 18

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS8322Z36AD-200I

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.58

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Bulk

GS8322Z36AD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8662D

活跃

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662D18BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

72 Mbit

2

400 MHz

745 mA

450 ps

SRAM

Parallel

Pipelined

4 M x 18

-

20 Bit

SRAM

72 Mbit

Industrial

SRAM

4M x 18

N/A

-

8 Weeks

YES

165

165

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.61

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

有

GS8321Z36AGD-200I

-40 to 100 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

4

SYNCHRONOUS

Flow-Through/Pipelined

1MX36

1.4 mm

36

20 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS88136CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

140 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

17 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Tray

GS8161Z32DGD

NBT

Memory & Data Storage

18 Mbit

180 mA, 190 mA

7.5 ns

512 k x 32

SRAM

SRAM

N/A

-

YES

165

165

Compliant

15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662Q18GE-250

BGA

8.46

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

LBGA

1.8 V

4194304 words

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

2

SYNCHRONOUS

4MX18

1.5 mm

18

21 b

72 Mb

75497472 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

12 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x17)

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

GSI Technology Inc.

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Tray

GS81302DT37

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302DT37GE-450I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

7.62

BGA

Industrial grade

450 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302DT37GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

450 MHz

1.41 A

450 ps

SRAM

Parallel

Pipelined

4 M x 36

1.5 mm

36

-

20 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

4M x 36

17 mm

15 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0.812183 oz

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS880Z36CGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

-40 to 85 °C

Tray

GS880Z36CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

150 mA, 160 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

TSOP-44

GSI技术

Details

SDR

有

-

+ 85 C

3.6 V

- 40 C

135

3 V

SMD/SMT

Parallel

GSI技术

GS72116AGP

Asynchronous

Memory & Data Storage

2 Mbit

90 mA

12 ns

128 k x 16

SRAM

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

无

GS816136DD-250I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.95

BGA

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

Bulk

GS816136DD

3A991.B.2.B

Pipeline/Flow Through

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

250 mA, 270 mA

5.5 ns

512 k x 36

1.4 mm

36

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

YES

100

100

36 Bit

512 kWords

有

-

+ 100 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

有

GS8160F36DGT-7.5I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.47

Industrial grade

133.3 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

表面贴装

2.7, 3.6 V

-40 to 85 °C

Tray

GS8160F36DGT

3A991.B.2.B

流过

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

18 Mbit

4

SYNCHRONOUS

210 mA

7.5 ns

Flow-Through

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS88032CGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.9

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS88032CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

3-STATE

1.6 mm

32

18 Bit

SRAM

9 Mbit

0.025 A

8388608 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

36

- 40 C

3.6 V

+ 100 C

150 MHz

有

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8160Z36DGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8160Z36DGT

3A991.B.2.B

NBT Pipeline/Flow Through

PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

18

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8160Z18DGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.71

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 85 °C

Tray

GS8160Z18DGT

3A991.B.2.B

NBT Pipeline/Flow Through

PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

170 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

YES

100

100

3

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8161Z36BGT-200

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.59

QFP

ROHS COMPLIANT, TQFP-100

FLATPACK, LOW PROFILE

有

3A991.B.2.B

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

512KX36

1.6 mm

36

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

YES

100

100

Compliant

LQFP,

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8320Z36GT-200I

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.68

QFP

e3

有

3A991.B.2.B

纯哑光锡

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

4

SYNCHRONOUS

1MX36

1.6 mm

36

20 b

36 Mb

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

无