N/A

-

7 Weeks, 5 Days

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

0.460219 oz

GSI Technology Inc.

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS832036

活跃

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

有

GS832036AGT-250I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.88

QFP

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS832036AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

250 MHz

250 mA, 305 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

-

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

1M x 36

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

GSI Technology Inc.

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

活跃

GS832036

Tray

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

有

GS832036AGT-333IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.66

QFP

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 100 °C

Tray

GS832036AGT

3A991.B.2.B

同步突发

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

SRAM - Synchronous, Standard

1.7V ~ 2V, 2.3V ~ 2.7V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

333 MHz

290 mA, 375 mA

5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

-

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

1M x 36

20 mm

14 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS881Z

活跃

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS881Z36CGD

NBT Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

9 Mbit

1

333 MHz

200 mA, 260 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

-

18 Bit

SRAM

9 Mbit

Industrial

SRAM

256K x 36

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8342Q

活跃

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q36BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

36 Mbit

2

357 MHz

1.155 A

SRAM

Parallel

Pipelined

1 M x 36

-

19 Bit

SRAM

36 Mbit

Industrial

SRAM

1M x 36

N/A

-

表面贴装

TQFP-100

100

100-TQFP (20x14)

GSI Technology Inc.

GSI技术

SyncBurst

Details

SDR

Tray

GS88036

活跃

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS88036CGT

Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

9 Mbit

4

333 MHz

200 mA, 260 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

-

SRAM

9 Mbit

Industrial

SRAM

256K x 36

N/A

-

表面贴装

165-LBGA

165

165-FPBGA (13x15)

GSI Technology Inc.

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

Tray

GS816118

活跃

Volatile

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

-40 to 85 °C

Bulk

-

85 °C

-40 °C

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

18Mbit

2

333 MHz

260 mA, 305 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 18

-

20 Bit

18 Mbit

Industrial

1M x 18

无

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8342D

活跃

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D18BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

36 Mbit

2

400 MHz

715 mA

SRAM

Parallel

Pipelined

2 M x 18

-

19 Bit

SRAM

36 Mbit

Industrial

SRAM

2M x 18

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS816136

活跃

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS816136DGD

Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

18 Mbit

4

333 MHz

280 mA, 335 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 36

-

19 Bit

SRAM

18 Mbit

Industrial

SRAM

512K x 36

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Tray

GS8342T

活跃

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342T18BGD

SigmaDDR-II B2

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

36 Mbit

1

400 MHz

610 mA

SRAM

Parallel

Pipelined

2 M x 18

-

21 Bit

SRAM

36 Mbit

Industrial

SRAM

2M x 18

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

GSI Technology Inc.

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8642Z

活跃

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8642Z36GB-250IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

166.6@Flow-Through/250@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS8642Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

2M x 36

22 mm

14 mm

N/A

-

表面贴装

TQFP-100

100

100-TQFP (20x14)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Tray

GS8320Z

活跃

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Bulk

GS8320Z36AGT

NBT Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

36 Mbit

4

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

-

20 Bit

SRAM

36 Mbit

Industrial

SRAM

1M x 36

无

N/A

-

12 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

128 kWords

36 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

有

200 MHz

+ 85 C

3.6 V

0.304823 oz

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS84036CGT-200I

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

Industrial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

-40 to 100 °C

Tray

GS84036CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

4 Mbit

4

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

Flow-Through/Pipelined

128 k x 36

1.6 mm

36

17 Bit

SRAM

4 Mbit

4718592 bit

Industrial

PARALLEL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS880Z36CGT-200

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.2

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS880Z36CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

0.5 ns

70 °C

有

GS8182R36BGD-167

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.67

BGA

有

167 MHz

+ 70 C

1.9 V

0.224777 oz

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

Tray

GS8182R36BGD

e1

有

3A991.B.2.B

SigmaDDR-II B4

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

330 mA

500 ps

512 k x 36

1.4 mm

36

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

YES

165

165

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

5.5 ns

无

GS8321Z18AD-250I

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2

SYNCHRONOUS

Flow-Through/Pipelined

2MX18

1.4 mm

18

21 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

5 Weeks, 3 Days

TQFP-100

YES

100

100

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS816018DGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.71

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 85 °C

Tray

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

170 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

8

21 Bit

SRAM

18 Mbit

8388608 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

无

GS8321Z36AD-150I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

-40 to 100 °C

Tray

GS8321Z36AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS816036DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

180 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

+ 85 C

250 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342D36BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.88

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Tray

GS8342D36BGD

e1

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

685 mA

450 ps

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.195 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342Q36BGD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.91

BGA

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8342Q36BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

1.065 A

450 ps

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.245 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

表面贴装

2.7, 3.6 V

18 Bit

512 kWords

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

72

- 40 C

3.6 V

+ 85 C

200 MHz

有

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

有

GS88118CGD-200I

3.3 V

LBGA

RECTANGULAR

活跃

BGA

4.81

GSI TECHNOLOGY

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

Tray

GS88118CGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

150 mA, 175 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

19 Bit

SRAM

9 Mbit

9437184 bit

Industrial

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

0.594778 oz

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS8322Z18AD-200I

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.77

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS8322Z18AD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks, 2 Days

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

7.5 ns

85 °C

有

GS832132AGD-150I

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.48

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS832132AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

SRAM

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

14

0 C

3.6 V

+ 70 C

167 MHz

有

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

SyncBurst

Details

SDR

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

0 to 70 °C

Tray

GS864218GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

9 Bit

表面贴装

有

250 MHz

+ 85 C

1.9 V

0.541455 oz

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342Q09BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.06

BGA

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

-40 to 100 °C

Tray

GS8342Q09BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

675 mA

450 ps

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

0.215 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm