N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

167 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

BGA

4.64

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

GS8182Q36BGD-167I

有

85 °C

0.5 ns

未说明

-40 °C

PLASTIC/EPOXY

512000

3

GRID ARRAY, LOW PROFILE

LBGA,

Industrial grade

167 MHz

FBGA

DDR

-40 to 85 °C

Tray

GS8182Q36BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

495 mA

500 ps

Pipelined

512 k x 36

1.4 mm

36

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

YES

165

165

Synchronous

8 MWords

18 Bit

1.9 V

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

BGA,

网格排列

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302D19GE-400

1.8 V

BGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.2

BGA

Commercial grade

400 MHz

FBGA

1.8000 V

1.7 V

0 to 70 °C

Tray

GS81302D19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

1.055 A

0.45

8 M x 18

18

SRAM

144

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

18

- 40 C

3.6 V

+ 85 C

150 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

7.5 ns

85 °C

无

GS8321E36AD-150I

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8321E36AD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

YES

165

165

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

无

GS8321Z18AD-200I

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2

SYNCHRONOUS

Flow-Through/Pipelined

2MX18

1.4 mm

18

21 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8161Z18DGD-150I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.79

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS8161Z18DGD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS8342DT20BGD-500

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.78

BGA

Commercial grade

500 MHz

FBGA

0 to 85 °C

Tray

GS8342DT20BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

855 mA

450 ps

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS816032DGT-200IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

-40 to 100 °C

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS816018DGT-250

1048576 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.84

QFP

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 85 C

250 MHz

有

Tray

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 230 mA

5.5 ns

1 M x 18

1.6 mm

8

21 b

SRAM

18 Mb

8388608 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

有

250 MHz

+ 70 C

1.9 V

Tray

GS8182T18BGD

SigmaDDR-II B2

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

1

350 mA

450 ps

1 M x 18

20 b

SRAM

18 Mb

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

有

GS8160Z18DGT-200I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.68

Industrial grade

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

有

200 MHz

-40 to 100 °C

Tray

GS8160Z18DGT

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 b

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

12 Weeks

表面贴装

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

295 mA

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

1.051276 oz

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS8644Z36E-250I

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.64

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

-40 to 85 °C

Tray

GS8644Z36E

无

3A991.B.2.B

NBT

85 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

153.8 MHz

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 435 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.16 A

75497472 bit

Industrial

PARALLEL

COMMON

Synchronous

36 b

ZBT SRAM

2.3 V

3.6 V

2.3 V

SRAM

17 mm

15 mm

无

N/A

-

8 Weeks

YES

100

100

未说明

6.5 ns

85 °C

有

GS832018AGT-200V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.06

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

LQFP,

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

0 to 85 °C

Bulk

3A991.B.2.B

85 °C

0 °C

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

2

SYNCHRONOUS

Flow-Through/Pipelined

2MX18

1.6 mm

18

21 Bit

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342QT37BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.66

BGA

Commercial grade

333 MHz

FBGA

0 to 85 °C

Tray

GS8342QT37BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

1.01 A

450 ps

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

GS881E18CGD-150

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.62

BGA

Compliant

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881E18CGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

512 k x 18

1.4 mm

18

18 b

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

15 mm

13 mm

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS816018DGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

QFP

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

8

21 b

SRAM

18 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

6.5 ns

85 °C

有

GS880F36CGT-6.5I

153 MHz

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.9

QFP

有

-

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS880F36CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

SYNCHRONOUS

160 mA

6.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.045 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342Q09BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

665 mA

450 ps

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS816032DGT-150

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

512 k x 32

1.6 mm

32

SRAM

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

Compliant

Bulk

100 °C

-40 °C

4

20 b

36 Mb

36

无

N/A

-

TQFP-100

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 85 C

3.6 V

Tray

GS881Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

150 mA, 160 mA

7.5 ns

256 k x 36

SRAM

SRAM

N/A

-

TQFP-100

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 85 C

3.6 V

GS880Z32CGT

NBT

Memory & Data Storage

9 Mbit

160 mA, 190 mA

6.5 ns

256 k x 32

SRAM

SRAM

N/A

-

表面贴装

TQFP-100

100

100-TQFP (20x14)

GSI Technology Inc.

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

活跃

GS816036

Tray

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 100 C

3.6 V

- 40 C

36

-40 to 100 °C

Tray

GS816036DGT

Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

18 Mbit

4

333 MHz

280 mA, 335 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 36

-

20 Bit

SRAM

18 Mbit

Industrial

SRAM

512K x 36

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

0.162437 oz

GSI Technology Inc.

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Tray

GS8342T

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342T18BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.86

BGA

Industrial grade

-40 to 100 °C

Tray

GS8342T18BGD

3A991.B.2.B

SigmaDDR-II B2

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

300 MHz

460 mA

450 ps

SRAM

Parallel

Pipelined

2 M x 18

3-STATE

1.4 mm

18

-

21 Bit

SRAM

36 Mbit

0.195 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

2M x 18

15 mm

13 mm

N/A

-

BGA-165

165

0.324873 oz

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 70 C

2.7 V

0 to 70 °C

Tray

GS8644Z18GE

NBT

70 °C

0 °C

Memory & Data Storage

72 Mbit

2

250 mA, 315 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

GSI Technology Inc.

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS880Z

活跃

LQFP,

FLATPACK, LOW PROFILE

256000

UNSPECIFIED

-40 °C

未说明

85 °C

有

GS880Z36CGT-250IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.65

QFP

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS880Z36CGT

3A991.B.2.B

NBT

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

250 MHz

160 mA, 200 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

-

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

256K x 36

20 mm

14 mm