N/A

-

BGA-209

209

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

225 mA, 280 mA

8 ns

Flow-Through/Pipelined

512 k x 72

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662D18BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

333 MHz

0 to 85 °C

Tray

GS8662D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

630 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

142.8@Flow-Through/166@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

-40 to 85 °C

Tray

GS8644Z36GE

NBT

Memory & Data Storage

72 Mbit

4

285 mA, 345 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

表面贴装

400 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

BGA

5.3

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

2.5 V

400 MHz

GS8321E36AD-400

无

85 °C

4 ns

未说明

BGA165,11X15,40

PLASTIC/EPOXY

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

0 to 85 °C

e0

无

3A991.B.2.B

锡铅

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 125 C

3.6 V

- 55 C

2.3 V

SMD/SMT

Parallel

Military grade

153@Flow-Through/200@Pipelined MHz

FBGA

SDR

-55 to 125 °C

GS8162Z18DB

18 Mbit

2

240 mA, 245 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Military

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT07GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

755 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

256000

UNSPECIFIED

-40 °C

未说明

85 °C

有

GS88136CGT-333I

262144 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

222.2@Flow-Through/333@Pipelined MHz

TQFP

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

-40 to 85 °C

Tray

GS88136CGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

200 mA, 260 mA

4.5@Flow-Through/2.5

256 k x 36

1.6 mm

36

SRAM

9

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT20E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.27 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

有

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

DDR

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

+ 85 C

300 MHz

-40 to 100 °C

Tray

GS8662Q08BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

860 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

375 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

-40 to 100 °C

GS8162Z18DD

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

表面贴装

2, 2.7 V

36 Bit

512 kWords

有

333 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 85 °C

Tray

GS816236DGB

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

有

GS8322Z18AGD-150V

150 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8322Z18AGD

3A991.B.2.B

NBT

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

185 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

357 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

357 MHz

FBGA

QDR

-40 to 100 °C

72 Mbit

2

995 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T38BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

765 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q09BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Tray

GS8662Q09BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

730 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT38E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.31 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

333 MHz

+ 70 C

0 to 85 °C

72 Mbit

920 mA

0.45

8 M x 8

72

Commercial

N/A

-

BGA-165

165

FBGA

2.5, 3.3 V

2.3, 3 V

36 Bit

2.7, 3.6 V

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

-40 to 100 °C

36 Mbit

280 mA, 365 mA

4.5@Flow-Through/2.5

1 M x 36

36

N/A

-

10 Weeks

BGA-165

YES

165

165

36 Bit

1 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

550 MHz

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342T38BD-550

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Commercial grade

表面贴装

1.9 V

0 to 85 °C

Tray

GS8342T38BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

1.04 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.255 A

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS881E32CD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

10

0 C

1.9 V

+ 70 C

300 MHz

有

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

DDR-II

Details

SigmaSIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS81302S09GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302S18GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

825 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662DT06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

-40 to 85 °C

Tray

GS8640E36GT

DCD

Memory & Data Storage

72 Mbit

275 mA, 380 mA

6.5@Flow-Through/3@P

2 M x 36

SRAM

72

Industrial

SRAM