GSI Technology GS8640E36GT-250IV
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GS8640E36GT-250IV
2984-GS8640E36GT-250IV
存储器
TQFP-100
大陆
立即发货

Cache SRAM, 2MX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
1最小包装量--
GS8640E36GT-250IV详情
GSI Technology GS8640E36GT-250IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TQFP-100
引脚数
100
Maximum Clock Rate
153.8@Flow-Through/250@Pipelined MHz
Supplier Package
TQFP
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Moisture Sensitive
有
Maximum Clock Frequency
250 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
18
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
Details
Memory Types
SDR
Usage Level
Industrial grade
操作温度
-40 to 85 °C
系列
GS8640E36GT
包装
Tray
类型
DCD
子类别
Memory & Data Storage
内存大小
72 Mbit
电源电流-最大值
275 mA, 380 mA
访问时间
6.5@Flow-Through/3@P
组织结构
2 M x 36
产品类别
SRAM
记忆密度
72
筛选水平
Industrial
产品类别
SRAM
GS8640E36GT-250IV拓展信息
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