N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

0.578352 oz

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8160Z36DGT-200

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.74

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 85 °C

Tray

GS8160Z36DGT

3A991.B.2.B

NBT Pipeline/Flow Through

PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

1 MWords

18 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8182Q18

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182Q18BGD-300I

BGA

5.16

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 85 °C

Tray

GS8182Q18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

300 MHz

810 mA

SRAM

Parallel

Pipelined

1 M x 18

1.4 mm

18

-

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

1M x 18

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

0.5 ns

70 °C

有

GS8182Q18BGD-167

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

167 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA,

Tray

GS8182Q18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

435 mA

1 M x 18

1.4 mm

18

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

18 Weeks

TSOP-44

YES

44

44

+ 85 C

3.6 V

- 40 C

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

TSOP2

1.28

GSI TECHNOLOGY

活跃

RECTANGULAR

TSOP2

3.3 V

GS71116AGP-10I

有

85 °C

10 ns

未说明

-40 °C

TSOP44,.46,32

PLASTIC/EPOXY

64000

3

Industrial grade

TSOP-II

3.3000 V

Asynchronous

64 kWords

16 Bit

表面贴装

Compliant

SRAM

有

-40 to 85 °C

GS71116AGP

e3

有

SMD/SMT

3A991.B.2.B

Asynchronous

Matte Tin (Sn)

85 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

128 kB

1

ASYNCHRONOUS

105 mA

10 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

18.41 mm

10.16 mm

无

无SVHC

N/A

-

8 Weeks

BGA-165

YES

165

165

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182D09BD-250

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

Tray

GS8182D09BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

420 mA

2 M x 9

1.4 mm

9

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342D36BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

BGA

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

0 to 85 °C

Tray

GS8342D36BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

675 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.2 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

11 Weeks, 3 Days

TSOP-44

YES

44

44

表面贴装

有

+ 70 C

3.6 V

0.016882 oz

0 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

256000

PLASTIC/EPOXY

TSOP44,.46,32

未说明

8 ns

70 °C

有

GS74116AGP-8

3.3 V

TSOP2

RECTANGULAR

活跃

GSI TECHNOLOGY

1.71

TSOP2

Commercial grade

TSOP-II

3.3000 V

3 V

Asynchronous

256 kWords

16 Bit

3.6 V

0 to 70 °C

GS74116AGP

e3

有

3A991.B.2.B

Asynchronous

纯哑光锡

8542.32.00.41

Memory & Data Storage

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

COMMERCIAL

4 Mbit

1

ASYNCHRONOUS

130 mA

8 ns

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.01 A

4194304 bit

Commercial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

18.41 mm

10.16 mm

N/A

-

TQFP-100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Tray

GS88018CGT

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

120 mA, 130 mA

7.5 ns

512 k x 18

SRAM

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS8640Z36GT-167

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS8640Z36GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

9 Weeks, 5 Days

YES

44

44

SMALL OUTLINE, THIN PROFILE

3

512000

PLASTIC/EPOXY

未说明

12 ns

70 °C

有

GS74108AGP-12

524288 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.29

TSOP2

Compliant

TSOP2,

e3

有

3A991.B.2.B

Matte Tin (Sn)

70 °C

0 °C

8542.32.00.41

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

COMMERCIAL

1

ASYNCHRONOUS

512KX8

1.2 mm

8

19 b

4 Mb

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS88036CGT-200

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.67

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS88036CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

Tray

GS81282Z18GD

NBT Pipeline/Flow Through

144 Mbit

295 mA, 360 mA

6.5 ns

8 M x 18

N/A

-

TQFP-100

Details

333 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

Tray

GS81280E32GT

Pipeline/Flow Through

144 Mbit

435 mA, 600 mA

4.5 ns

4 M x 32

N/A

-

BGA-165

Details

250 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

Tray

GS82564Z18GD

NBT Pipeline/Flow Through

288 Mbit

450 mA, 540 mA

5.5 ns

16 M x 18

N/A

-

BGA-119

Details

250 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

Tray

GS81282Z18GB

NBT Pipeline/Flow Through

144 Mbit

380 mA, 450 mA

5.5 ns

8 M x 18

N/A

-

BGA-165

Details

333 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

SyncBurst

2.7 V

Tray

GS8256436GD

Pipeline/Flow Through

288 Mbit

550 mA, 710 mA

4.5 ns

8 M x 36

N/A

-

BGA-165

Details

375 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

DDR

有

10

SigmaQuad-II+

1.9 V

Tray

GS82582D19GE

SigmaQuad-II+ B4

288 Mbit

880 mA

16 M x 18

N/A

-

BGA-165

SyncBurst

10

有

SDR

SMD/SMT

+ 100 C

- 40 C

2.3 V

Parallel

200 MHz

Details

3.6 V

Tray

GS8128218GD

SCD/DCD Pipeline/Flow Through

144 Mbit

315 mA, 380 mA

6.5 ns

8 M x 18

N/A

-

BGA-165

400 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302Q37AGD

SigmaQuad-II+ B2

144 Mbit

1.22 A

4 M x 36

N/A

-

BGA-165

400 MHz

Parallel

1.7 V

0 C

+ 85 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302Q38AGD

SigmaQuad-II+ B2

144 Mbit

1.2 A

4 M x 36

N/A

-

BGA-165

450 MHz

Parallel

1.7 V

0 C

+ 85 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302QT20AGD

SigmaQuad-II+ B2

144 Mbit

1.18 A

8 M x 18

N/A

-

BGA-165

400 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302Q19AGD

SigmaQuad-II+ B2

144 Mbit

1.08 A

8 M x 18

N/A

-

BGA-165

Details

400 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302Q18AGD

SigmaQuad-II

144 Mbit

1.08 A

8 M x 18

N/A

-

BGA-165

375 MHz

Parallel

1.7 V

0 C

+ 85 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302Q19AGD

SigmaQuad-II+ B2

144 Mbit

1 A

8 M x 18

N/A

-

BGA-165

500 MHz

Parallel

1.7 V

0 C

+ 85 C

SMD/SMT

QDR

10

SigmaQuad-II

1.9 V

GS81302QT38AGD

SigmaQuad-II+ B2

144 Mbit

1.61 A

4 M x 36