N/A

-

BGA-119

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

SMD/SMT

Parallel

Tray

GS882Z18CGB

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

150 mA, 175 mA

6.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

200 MHz

72 Mbit

870 mA

4 M x 18

72

N/A

-

BGA-165

N

400 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

QDR-II

有

15

SigmaQuad-II

1.9 V

Tray

GS8672Q18BE

SigmaQuad-II

72 Mbit

1.36 A

4 M x 18

72

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q37BGE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.48 A

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8160E36DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5 ns

512 k x 36

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS881Z32CGT

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

160 mA, 190 mA

6.5 ns

256 k x 32

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS881Z32CGT

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

150 mA, 160 mA

7.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342S18BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

SDR

QFP,

FLATPACK

512000

UNSPECIFIED

-40 °C

未说明

4.2 ns

85 °C

有

GS8161E36DGT-200I

524288 words

2.5 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.64

QFP

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS8161E36DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-XQFP-G100

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

36

SRAM

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

N/A

-

BGA-165

165

DDR

Commercial grade

450 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

0 to 85 °C

Tray

GS8342DT11BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

785 mA

0.45

4 M x 9

SRAM

36

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T18BD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

1

395 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

6 Weeks

YES

165

165

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

36 Bit

2.7, 3.6 V

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

无

GS8321Z36AD-200I

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.78

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

SYNCHRONOUS

6.5@Flow-Through/3@P

1MX36

1.4 mm

36

36

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342QT07BGD-200I

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

-40 to 100 °C

Tray

GS8342QT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

565 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342R09BD-350I

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

350 MHz

FBGA

-40 to 100 °C

Tray

GS8342R09BD

e0

3A991.B.2.B

SigmaDDR-II B4

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

575 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

0.22 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS8342DT07BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8342DT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn/Ag/Cu)

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

605 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

0 to 70 °C

Tray

GS880Z18CGT

NBT

Memory & Data Storage

9 Mbit

1

130 mA, 155 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342Q19BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

555 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 70 °C

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

250 MHz

FBGA

1.8000 V

Synchronous

18 Bit

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

0 to 85 °C

GS8342Q19BD

36 Mbit

665 mA

0.45

2 M x 18

36

N/A

-

10 Weeks

TQFP-100

YES

100

100

表面贴装

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS816032DGT-250IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

-40 to 100 °C

GS816032DGT

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

250 mA, 270 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

18 Mbit

16777216 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

165

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

-40 to 100 °C

Tray

GS8342R36BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

735 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS880E36CGT-200

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.61

QFP

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS880E36CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.025 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342DT10BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

605 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

18

1.7 V

SMD/SMT

Parallel

GSI技术

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

GSI技术

SigmaQuad-II

DDR

有

333 MHz

+ 70 C

1.9 V

0 C

0 to 70 °C

Tray

GS8182D09BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

515 mA

Pipelined

2 M x 9

19 Bit

SRAM

18 Mbit

Commercial

SRAM