GSI Technology GS8342T18BD-250
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GS8342T18BD-250
2984-GS8342T18BD-250
存储器
BGA-165
大陆
立即发货

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, BGA-165
1最小包装量--
GS8342T18BD-250详情
GSI Technology GS8342T18BD-250重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Maximum Clock Rate
250 MHz
Supplier Package
FBGA
Data Rate Architecture
DDR
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
Timing Type
Synchronous
Number of Words
2 MWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
1.9 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
250 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
1.9 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
15
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SigmaDDR-II
RoHS
N
Memory Types
DDR
Usage Level
Commercial grade
操作温度
0 to 85 °C
系列
GS8342T18BD
包装
Tray
类型
SigmaDDR-II B2
子类别
Memory & Data Storage
引脚数量
165
内存大小
36 Mbit
端口的数量
1
电源电流-最大值
395 mA
建筑学
Pipelined
组织结构
2 M x 18
地址总线宽度
21 Bit
产品类别
SRAM
密度
36 Mbit
筛选水平
Commercial
产品类别
SRAM
GS8342T18BD-250拓展信息
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