IDT的存储器_正品采购_价格信息

品牌是'IDT' (6623)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	生命周期状态	底架	安装类型	包装/外壳	表面安装	引脚数	供应商器件包装	终端数量										厂商																							操作温度	包装	系列	JESD-609代码	无铅代码	零件状态	ECCN 代码	类型	端子表面处理	最高工作温度	最小工作温度	附加功能	HTS代码	子类别	最大功率耗散	技术	电压 - 供电	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	频率	时间@峰值回流温度-最大值(s)	频率稳定性	JESD-30代码	最大电流源	输出的数量	资历状况	输出电压	输出类型		极性	电源	温度等级	通道数量	电路数量	内存大小	工作电源电流	端口的数量	操作模式	输出电流	静态电流	电源电流-最大值	准确性	重置	访问时间	稳压器数	最小输入电压	压摆率	内存格式	内存接口	监测的电压数量	重置超时	共模拒绝率	最大输入电压	组织结构	输出特性	每个通道的输出电流	座位高度-最大	内存宽度	写入周期时间 - 字符、页面	压差电压	最小复位阈值电压	最大复位阈值电压	电源抑制比	待机电流-最大值	阈值电压	记忆密度	低电压阈值	过压阈值	噪音	筛选水平	并行/串行	I/O类型	内存IC类型	输入偏置电流	待机电压-最小值
IDT71V321L35PFI	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	64	3.3 V	FLATPACK	SQUARE	QFP64,.66SQ,32	QFP							无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	35 ns	3	2048 words	2000	85 °C	-40 °C					e0	无		EAR99		锡铅				8542.32.00.41					QUAD	鸥翼	240		0.8 mm	not_compliant		30		S-PQFP-G64			不合格			PLASTIC/EPOXY			INDUSTRIAL					2	ASYNCHRONOUS			0.095 mA													2KX8	3-STATE			8						0.004 A		16384 bit					PARALLEL	COMMON	MULTI-PORT SRAM		2 V
IDT71256L35TDB	Integrated Device Technology (IDT)	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	28	28	DIP28,.3	-55 °C	20	35 ns		125 °C	无	IDT71256L35TDB	32768 words	5 V	DIP	RECTANGULAR	Integrated Device Technology Inc	活跃	INTEGRATED DEVICE TECHNOLOGY INC	5.08	DIP	Military grade						DIP, DIP28,.3	IN-LINE	1	32000				e0	无		3A001.A.2.C		Tin/Lead (Sn/Pb)				8542.32.00.41	SRAMs		CMOS		DUAL	THROUGH-HOLE	240	1	2.54 mm	not_compliant				R-GDIP-T28			不合格			CERAMIC, GLASS-SEALED		5 V	MILITARY					1	ASYNCHRONOUS			0.12 mA													32KX8	3-STATE		5.08 mm	8						0.0005 A		262144 bit				MIL-STD-883 Class B	PARALLEL	COMMON	标准SRAM		2 V		5.5 V	4.5 V	YES			37.1475 mm	7.62 mm
70V9289L6PRF	Integrated Device Technology (IDT)	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	128	128	PLASTIC/EPOXY	QFP128,.63X.87,20	PK128	未说明	6.5 ns		70 °C	无	70V9289L6PRF	100 MHz	65536 words	3.3 V	QFP	RECTANGULAR	Integrated Device Technology Inc	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	5.83	TQFP	集成设备技术						QFP, QFP128,.63X.87,20	FLATPACK	3				e0	无				Tin/Lead (Sn85Pb15)			FLOW-THROUGH OR PIPELINED ARCHITECTURE		SRAMs		CMOS		QUAD	鸥翼	225	1	0.5 mm	not_compliant				R-PQFP-G128			不合格			64000		3.3 V	COMMERCIAL					2	SYNCHRONOUS			0.28 mA													64KX16	3-STATE			16						0.002 A		1048576 bit					PARALLEL	COMMON	特殊应用Sram		3 V		3.6 V	3 V
70V9169L7PFI	Integrated Device Technology (IDT)	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	100	16000	PLASTIC/EPOXY	QFP100,.63SQ,20	PN100	-40 °C	20		7.5 ns	85 °C	无	70V9169L7PFI	83 MHz	16384 words	3.3 V	LFQFP	SQUARE	Integrated Device Technology Inc	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	5.26	TQFP	集成设备技术						14 X 14 MM, 1.4 MM HEIGHT, TQFP-100	FLATPACK, LOW PROFILE, FINE PITCH				e0	无		EAR99		Tin/Lead (Sn85Pb15)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs		CMOS		QUAD	鸥翼	240	1	0.5 mm	not_compliant				S-PQFP-G100			不合格			3		3.3 V	INDUSTRIAL					2	SYNCHRONOUS			0.28 mA													16KX9	3-STATE		1.4 mm	9						0.003 A		147456 bit					PARALLEL	COMMON	DUAL-PORT SRAM		3 V		3.6 V	3 V				14 mm	14 mm
709349L9BF	Integrated Device Technology (IDT)	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	100	BGA100,10X10,32	BF100	未说明	20 ns		70 °C	无	709349L9BF	4096 words	5 V	LFBGA	SQUARE	Integrated Device Technology Inc	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	5.91	CABGA	集成设备技术						FPBGA-100	GRID ARRAY, LOW PROFILE, FINE PITCH	3	4000				e0	无		EAR99		Tin/Lead (Sn63Pb37)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs		CMOS		BOTTOM	BALL	225	1	0.8 mm	not_compliant				S-PBGA-B100			不合格			PLASTIC/EPOXY		5 V	COMMERCIAL					2	SYNCHRONOUS			0.36 mA													4KX18	3-STATE		1.5 mm	18						0.003 A		73728 bit					PARALLEL	COMMON	DUAL-PORT SRAM		4.5 V		5.5 V	4.5 V				10 mm	10 mm
709359L7BFI	Integrated Device Technology (IDT)	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	100	PLASTIC/EPOXY	BGA100,10X10,32	BF100	-40 °C	未说明		18 ns	85 °C	无	709359L7BFI	8192 words	5 V	LFBGA	SQUARE	Integrated Device Technology Inc	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	5.91	CABGA	集成设备技术						FPBGA-100	GRID ARRAY, LOW PROFILE, FINE PITCH	3				e0	无		EAR99		Tin/Lead (Sn63Pb37)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs		CMOS		BOTTOM	BALL	225	1	0.8 mm	not_compliant				S-PBGA-B100			不合格			8000		5 V	INDUSTRIAL					2	SYNCHRONOUS			0.44 mA													8KX18	3-STATE		1.5 mm	18						0.003 A		147456 bit					PARALLEL	COMMON	DUAL-PORT SRAM		4.5 V		5.5 V	4.5 V				10 mm	10 mm
7024S35JI	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	表面贴装	84-LCC (J-Lead)	84-PLCC (29.21x29.21)		Compliant	Volatile				-40°C ~ 85°C (TA)	Tape & Reel (TR)	--			Obsolete				85 °C	-40 °C					SRAM - Dual Port, Asynchronous	4.5 V ~ 5.5 V							150 MHz		50 ppm		105 mA											64Kb (4K x 16)									35ns				SRAM	Parallel										35ns																						838.2 µm	7.0104 mm	5.0038 mm
7005L45JI	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	68-LCC (J-Lead)	20	68-PLCC (24.21x24.21)		Non-Compliant	Volatile				-40°C ~ 85°C (TA)	Tube	--			Obsolete				85 °C	-40 °C					SRAM - Dual Port, Asynchronous	4.5 V ~ 5.5 V																						64Kb (8K x 8)									45ns				SRAM	Parallel										45ns																		5.5 V	2.9 V
70V27L15PFI/2703	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	Production (Last Updated: 4 months ago)	表面贴装	表面贴装	100-LQFP	6	100-TQFP (14x14)		PRODUCTION (Last Updated: 1 week ago)	Compliant	无		Volatile	-40°C ~ 85°C (TA)	Tray	--			Obsolete				85 °C	-40 °C				727 mW	SRAM - Dual Port, Asynchronous	3 V ~ 3.6 V												1		1.6 V	固定式		Positive					512Kb (32K x 16)				300 mA	140 µA		0.5 %		15ns	1	1.62 V		SRAM	Parallel				3.6 V						15ns	100 mV									86							150 °C	3.6 V	2.12 V			1.1 mm
71342LA45JI8	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	表面贴装	52-LCC (J-Lead)	5	52-PLCC (19.13x19.13)		无	Compliant	Volatile			-40°C ~ 85°C (TA)	Tape & Reel (TR)	--			Obsolete				125 °C	-40 °C				571 mW	SRAM - Dual Port, Asynchronous	4.5 V ~ 5.5 V																						32Kb (4K x 8)									45ns				SRAM	Parallel										45ns																		5.5 V	1 V						无
71V321L55TFI8	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	Production (Last Updated: 1 month ago)	表面贴装	64-LQFP	5	64-TQFP (10x10)		Compliant	PRODUCTION (Last Updated: 1 month ago)	Volatile			-40°C ~ 85°C (TA)	Tape & Reel (TR)	--			Obsolete				125 °C	-40 °C				571 mW	SRAM - Dual Port, Asynchronous	3 V ~ 3.6 V																				1	1	16Kb (2K x 8)							0.5 %		55ns			10 V/µs	SRAM	Parallel			90 dB				1 mA			55ns				90 dB											120 µA			28 V	3 V
70261S35PFI8	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	表面贴装	100-LQFP	4	100-TQFP (14x14)		无	Compliant	Volatile			-40°C ~ 85°C (TA)	Tape & Reel (TR)	--			Obsolete		Simple Reset/Power-On Reset		125 °C	-40 °C				320 mW	SRAM - Dual Port, Asynchronous	4.5 V ~ 5.5 V																						256Kb (16K x 16)	5 µA							低电平有效	35ns				SRAM	Parallel	1	1 ms								35ns		3.025 V	3.135 V			3.08 V		3.025 V	3.135 V									5.5 V	1 V							无铅
71256L25Y	IDT	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	28-BSOJ (0.300, 7.62mm Width)	YES	28	28-SOJ	28	32000	PLASTIC/EPOXY	IDT, Integrated Device Technology Inc	30	25 ns	70 °C	无	71256L25Y	32768 words	5 V	SOJ	RECTANGULAR	Rochester Electronics LLC	活跃	ROCHESTER ELECTRONICS LLC	5.69	SOJ			Bulk	71256L	活跃	Volatile	0.300 INCH, SOJ-28	小概要	0°C ~ 70°C (TA)		-	e0	无				锡铅							SRAM - Asynchronous	4.5V ~ 5.5V	DUAL	J BEND	225	1	1.27 mm	unknown				R-PDSO-J28			COMMERCIAL			未说明			COMMERCIAL			256Kbit			ASYNCHRONOUS						25 ns				SRAM	Parallel					32KX8			3.556 mm	8	25ns							262144 bit					PARALLEL		标准SRAM				5.5 V	4.5 V		32K x 8		17.9324 mm	7.5184 mm
IDT70V9269S9PRFI	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	128	128		16000	85 °C	-40 °C	PLASTIC/EPOXY	LFQFP	QFP128,.63X.87,20	RECTANGULAR	FLATPACK, LOW PROFILE, FINE PITCH	3.3 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	QFP	14 X 20 MM, 1.40 MM HEIGHT, TQFP-128	20 ns	66 MHz	3				e0	无		EAR99		Tin/Lead (Sn85Pb15)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41					QUAD	鸥翼	225	1	0.5 mm	not_compliant		30		R-PQFP-G128			不合格			16384 words			INDUSTRIAL					2	SYNCHRONOUS			0.27 mA													16KX16	3-STATE		1.6 mm	16						0.005 A		262144 bit					PARALLEL	COMMON	MULTI-PORT SRAM		3 V		3.6 V	3 V				20 mm	14 mm
IDT7188L35D	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	22	22	DIP22,.3	RECTANGULAR	IN-LINE	5 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	0.300 INCH, CERDIP-22	35 ns	16384 words	16000	70 °C		CERAMIC, GLASS-SEALED				e0	无		EAR99		锡铅				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-GDIP-T22			不合格			DIP			COMMERCIAL					1	ASYNCHRONOUS			0.105 mA													16KX4	3-STATE		5.08 mm	4						0.00015 A		65536 bit					PARALLEL	COMMON	标准SRAM		2 V		5.5 V	4.5 V	NO			27.051 mm	7.62 mm
IDT7M912S35CB	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	40	RECTANGULAR	微电子组件	5 V							无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	35 ns	65536 words	64000	125 °C	-55 °C	UNSPECIFIED		DIP				e0			3A001.A.2.C		锡铅				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-XDMA-T40			不合格			DIP40,.6			MILITARY						ASYNCHRONOUS			1.08 mA													64KX9	3-STATE			9						0.18 A		589824 bit				MIL-STD-883 Class B (Modified)	PARALLEL	SEPARATE	SRAM MODULE		4.5 V		5.5 V	4.5 V
IDT7007S55JGI	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	68	68	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	PGA68,11X11	SQUARE	CHIP CARRIER	5 V						有	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	LCC	0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-68	55 ns	1	32768 words	32000				e3	有		EAR99		Matte Tin (Sn) - annealed				8542.32.00.41					QUAD	J BEND	260	1	1.27 mm	compliant		30		S-PQCC-J68			不合格						INDUSTRIAL					2	ASYNCHRONOUS			0.31 mA													32KX8	3-STATE		4.572 mm	8						0.03 A		262144 bit					PARALLEL	COMMON	MULTI-PORT SRAM		4.5 V		5.5 V	4.5 V				24.2062 mm	24.2062 mm
IDT7198S15P	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	24	24	70 °C	PLASTIC/EPOXY	DIP	DIP24,.3						RECTANGULAR	IN-LINE	5 V	无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	0.300 INCH, PLASTIC, DIP-24	15 ns		16384 words				e0	无		EAR99		锡铅				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-PDIP-T24			不合格			16000			COMMERCIAL					1	ASYNCHRONOUS			0.135 mA													16KX4	3-STATE		4.191 mm	4						0.02 A		65536 bit					PARALLEL	COMMON	标准SRAM		4.5 V		5.5 V	4.5 V	YES			31.6865 mm	7.62 mm
IDT7025S20PFB	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	100	-55 °C	PLASTIC/EPOXY	LFQFP	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	5 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	QFP	LFQFP,	20 ns	3	8192 words	8000					e0	无		3A001.A.2.C		Tin/Lead (Sn85Pb15)			CONFIGURABLE AS 8K X 16	8542.32.00.41					QUAD	鸥翼	240	1	0.5 mm	not_compliant		20		S-PQFP-G100			不合格			125 °C			MILITARY						ASYNCHRONOUS																8KX16			1.6 mm	16								131072 bit				MIL-PRF-38535	PARALLEL		DUAL-PORT SRAM				5.5 V	4.5 V				14 mm	14 mm
IDT7130SA55PG	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	48	48	IN-LINE	5 V						有	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	GREEN, PLASTIC, DIP-48	55 ns	1024 words	1000	70 °C		PLASTIC/EPOXY	DIP				e3			EAR99		哑光锡				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	compliant				R-PDIP-T48			不合格			RECTANGULAR			COMMERCIAL						ASYNCHRONOUS																1KX8			5.08 mm	8								8192 bit					PARALLEL		MULTI-PORT SRAM				5.5 V	4.5 V				61.849 mm	15.24 mm
IDT70T3399S133BCG	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	256	256	3	133 MHz	4.2 ns	LBGA, BGA256,16X16,40	BGA	INTEGRATED DEVICE TECHNOLOGY INC	Transferred	有						70 °C	CERAMIC, METAL-SEALED COFIRED	LBGA	BGA256,16X16,40	SQUARE	GRID ARRAY, LOW PROFILE	2.5 V	128000	131072 words				e1	有		3A991.B.2.A		Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41					BOTTOM	BALL	260	1	1 mm	compliant		30		S-CBGA-B256			不合格						COMMERCIAL					2	SYNCHRONOUS			0.37 mA													128KX18	3-STATE		1.7 mm	18						0.015 A		2359296 bit					PARALLEL	COMMON	MULTI-PORT SRAM		2.4 V		2.6 V	2.4 V				17 mm	17 mm
IDT71982S25C	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	28	28	DIP28,.4	RECTANGULAR	IN-LINE	5 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	0.400 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-28	25 ns	16384 words	16000	70 °C		CERAMIC, METAL-SEALED COFIRED				e0	无		EAR99		锡铅				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-CDIP-T28			不合格			DIP			COMMERCIAL					1	ASYNCHRONOUS			0.135 mA													16KX4	3-STATE		5.08 mm	4						0.015 A		65536 bit					PARALLEL	SEPARATE	标准SRAM		4.5 V		5.5 V	4.5 V	YES			35.56 mm	10.16 mm
IDT6168SA100DB	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	20	20	CERAMIC, GLASS-SEALED	DIP	DIP20,.3	RECTANGULAR	IN-LINE	5 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	0.300 INCH, CERDIP-20	100 ns	4096 words	4000	125 °C					e0			3A001.A.2.C		Tin/Lead (Sn/Pb)				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-GDIP-T20			不合格			-55 °C			MILITARY					1	ASYNCHRONOUS																4KX4	3-STATE		5.08 mm	4								16384 bit				38535Q/M;38534H;883B	PARALLEL	COMMON	标准SRAM		4.5 V		5.5 V	4.5 V	NO			25.3365 mm	7.62 mm
IDT6167SA100DB	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	20	20	CERAMIC, GLASS-SEALED	DIP	DIP20,.3	RECTANGULAR	IN-LINE	5 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	0.300 INCH, CERDIP-20	100 ns	16384 words	16000	125 °C					e0			3A001.A.2.C		锡铅				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-GDIP-T20			不合格			-55 °C			MILITARY					1	ASYNCHRONOUS																16KX1	3-STATE		5.08 mm	1								16384 bit				MIL-STD-883 Class B	PARALLEL	SEPARATE	标准SRAM				5.5 V	4.5 V	NO			25.3365 mm	7.62 mm
IDT7187S45C	Integrated Device Technology Inc	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	22	22	DIP22,.3	RECTANGULAR	IN-LINE	5 V						无	Obsolete	INTEGRATED DEVICE TECHNOLOGY INC	DIP	DIP, DIP22,.3	45 ns	65536 words	64000	70 °C		CERAMIC, METAL-SEALED COFIRED				e0	无		EAR99		锡铅				8542.32.00.41					DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-CDIP-T22			不合格			DIP			COMMERCIAL					1	ASYNCHRONOUS			0.11 mA													64KX1	3-STATE		5.08 mm	1						0.015 A		65536 bit					PARALLEL	SEPARATE	标准SRAM		4.5 V		5.5 V	4.5 V	NO			27.432 mm	7.62 mm