品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 端口的数量 | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 长度 | 宽度 | RoHS状态 | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71V3558S200PFG8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | 14 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TQFP-100 | FLATPACK, LOW PROFILE | 3 | 256000 | PLASTIC/EPOXY | QFP100,.63X.87 | PKG100 | 30 | 3.2 ns | 70 °C | 有 | 71V3558S200PFG8 | 200 MHz | 262144 words | 3.3 V | LQFP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.24 | TQFP | 集成设备技术 | e3 | 有 | 3A991 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.65 mm | unknown | R-PQFP-G100 | 不合格 | 3.3 V | COMMERCIAL | SYNCHRONOUS | 0.4 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 3.465 V | 3.135 V | 20 mm | 14 mm | |||||||||||||||||
![]() | IDT70V3319S133BC | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 256 | 256 | 3 | 256000 | PLASTIC/EPOXY | BGA256,16X16,40 | 20 | 15 ns | 70 °C | 无 | IDT70V3319S133BC | 133 MHz | 262144 words | 3.3 V | LBGA | SQUARE | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.13 | BGA | LBGA, BGA256,16X16,40 | e0 | 无 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | not_compliant | S-PBGA-B256 | 不合格 | GRID ARRAY, LOW PROFILE | 2.5/3.3,3.3 V | COMMERCIAL | 2 | SYNCHRONOUS | 0.4 mA | 256KX18 | 3-STATE | 1.7 mm | 18 | 0.03 A | 4718592 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3.15 V | 3.45 V | 3.15 V | 17 mm | 17 mm | |||||||||||||||||
![]() | 71V256SA10Y | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | 32000 | PLASTIC/EPOXY | SOJ28,.34 | 未说明 | 10 ns | 70 °C | 无 | 71V256SA10Y | 32768 words | 3.3 V | SOJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.26 | SOJ, SOJ28,.34 | 小概要 | e0 | 无 | Tin/Lead (Sn85Pb15) | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | R-PDSO-J28 | 不合格 | 3 | 3.3 V | COMMERCIAL | ASYNCHRONOUS | 0.1 mA | 32KX8 | 3-STATE | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | 缓存SRAM | 3 V | 3.6 V | 3 V | |||||||||||||||||||||||||||
![]() | 70V9289L6PRF8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 128 | 128 | TQFP | 5.83 | INTEGRATED DEVICE TECHNOLOGY INC | Obsolete | Integrated Device Technology Inc | RECTANGULAR | LFQFP | 3.3 V | 65536 words | 100 MHz | 70V9289L6PRF8 | 无 | 70 °C | 15 ns | 未说明 | PK128 | QFP128,.63X.87,20 | PLASTIC/EPOXY | 64000 | 3 | FLATPACK, LOW PROFILE, FINE PITCH | LFQFP, QFP128,.63X.87,20 | 集成设备技术 | e0 | 无 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 225 | 1 | 0.5 mm | not_compliant | R-PQFP-G128 | 不合格 | 3.3 V | COMMERCIAL | 2 | SYNCHRONOUS | 0.28 mA | 64KX16 | 3-STATE | 1.6 mm | 16 | 0.002 A | 1048576 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 3.6 V | 3 V | 20 mm | 14 mm | |||||||||||||||
![]() | 70V27L25PFG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | 32000 | PLASTIC/EPOXY | QFP100,.63SQ,20 | QFP | 5.19 | INTEGRATED DEVICE TECHNOLOGY INC | 活跃 | Integrated Device Technology Inc | SQUARE | QFP | 3.3 V | 32768 words | 70V27L25PFG | 有 | 70 °C | 25 ns | 30 | QFP, QFP100,.63SQ,20 | FLATPACK | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.5 mm | compliant | S-PQFP-G100 | 不合格 | 3 | 3.3 V | COMMERCIAL | 2 | ASYNCHRONOUS | 0.21 mA | 32KX16 | 3-STATE | 16 | 0.003 A | 524288 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 3.6 V | 3 V | ||||||||||||||||||||||
![]() | IDT71V256SA15YG8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | 28 | 32000 | PLASTIC/EPOXY | SOJ28,.34 | 30 | 15 ns | 70 °C | 有 | IDT71V256SA15YG8 | 32768 words | 3.3 V | SOJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.36 | SOJ | SOJ, SOJ28,.34 | 小概要 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 260 | 1 | 1.27 mm | compliant | R-PDSO-J28 | 不合格 | 3 | 3.3 V | COMMERCIAL | 1 | ASYNCHRONOUS | 0.085 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | 缓存SRAM | 3 V | 3.6 V | 3 V | YES | 17.9324 mm | 7.5184 mm | ||||||||||||||||||
![]() | IDT71V67603ZS133PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | RAM, SRAM | 2009 | 70°C | 0°C | 133MHz | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V25761YSA183BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | Tape & Reel (TR) | 2009 | 85°C | -40°C | 183MHz | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT7164L20YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 28 | RAM, SRAM - Asynchronous | 2009 | 85°C | -40°C | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V35761YSA183BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | Tape & Reel (TR) | 2009 | 70°C | 0°C | 183MHz | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V3577SA75BQGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | 2005 | 85°C | -40°C | Parallel | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V3577SA75BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | 2005 | 85°C | -40°C | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V3559SA85BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | Tape & Reel (TR) | 2009 | 85°C | -40°C | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71256TTSA25Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | 70°C | 0°C | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V3559SA75BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | Tape & Reel (TR) | 2009 | 70°C | 0°C | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P79804S250BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | DDR, RAM, SRAM | Tape & Reel (TR) | 2008 | 70°C | 0°C | 250MHz | Parallel | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P74804S200BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | QDR, RAM, SRAM | 2008 | 70°C | 0°C | 200MHz | Parallel | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P74604S167BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | QDR, RAM, SRAM | 2008 | 70°C | 0°C | 167MHz | Parallel | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V416VS10PHI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | 85°C | -40°C | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V416VS10BEI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | 85°C | -40°C | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P73804S200BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR2, RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | BOTTOM | BALL | 1mm | not_compliant | 200MHz | 不合格 | 1.5/1.81.8V | Parallel | SYNCHRONOUS | 0.55mA | 1MX18 | 3-STATE | 18 | 0.3A | 18874368 bit | 0.45 ns | COMMON | 1.7V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P79804S250BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR, RAM, SRAM | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | BOTTOM | BALL | 1mm | not_compliant | 250MHz | 不合格 | 1.5/1.81.8V | Parallel | SYNCHRONOUS | 0.9mA | 1MX18 | 3-STATE | 18 | 0.41A | 18874368 bit | 0.45 ns | SEPARATE | 1.7V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P74604S250BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | QDR, RAM, SRAM | Tape & Reel (TR) | 2008 | 70°C | 0°C | 250MHz | Parallel | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P72804S167BQGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | QDR, RAM, SRAM | Tape & Reel (TR) | 2006 | 85°C | -40°C | 167MHz | Parallel | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71P74604S250BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | QDR, RAM, SRAM | Tape & Reel (TR) | 2008 | 70°C | 0°C | 250MHz | Parallel | Non-RoHS Compliant |
71V3558S200PFG8
Integrated Device Technology
分类:Memory
IDT70V3319S133BC
Integrated Device Technology
分类:Memory
71V256SA10Y
Integrated Device Technology
分类:Memory
70V9289L6PRF8
Integrated Device Technology
分类:Memory
70V27L25PFG
Integrated Device Technology
分类:Memory
IDT71V256SA15YG8
Integrated Device Technology
分类:Memory
IDT71V67603ZS133PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V25761YSA183BQI8
Integrated Device Technology (IDT)
分类:Memory
IDT7164L20YI
Integrated Device Technology (IDT)
分类:Memory
IDT71V35761YSA183BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3577SA75BQGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3577SA75BQI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3559SA85BQI8
Integrated Device Technology (IDT)
分类:Memory
IDT71256TTSA25Y8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3559SA75BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71P79804S250BQG8
Integrated Device Technology (IDT)
分类:Memory
IDT71P74804S200BQG
Integrated Device Technology (IDT)
分类:Memory
IDT71P74604S167BQG
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS10PHI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS10BEI8
Integrated Device Technology (IDT)
分类:Memory
IDT71P73804S200BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71P79804S250BQI8
Integrated Device Technology (IDT)
分类:Memory
IDT71P74604S250BQG8
Integrated Device Technology (IDT)
分类:Memory
IDT71P72804S167BQGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71P74604S250BQ8
Integrated Device Technology (IDT)
分类:Memory
