N/A

-

N/A

-

N/A

-

YES

28

SOJ28,.34

RECTANGULAR

小概要

5 V

接触制造商

TM TECHNOLOGY INC

SOJ, SOJ28,.34

15 ns

32768 words

32000

70 °C

PLASTIC/EPOXY

SOJ

EAR99

8542.32.00.41

DUAL

J BEND

1.27 mm

unknown

R-PDSO-J28

不合格

COMMERCIAL

ASYNCHRONOUS

0.09 mA

32KX8

3-STATE

8

0.002 A

262144 bit

PARALLEL

COMMON

标准SRAM

4.5 V

N/A

-

2020-03-09

无

活跃

MICROCHIP TECHNOLOGY INC

3A001.A.2.C

8542.32.00.51

unknown

不合格

N/A

-

N/A

-

YES

28

70 °C

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

小概要

3.3 V

无

接触制造商

TM TECHNOLOGY INC

SOJ, SOJ28,.34

12 ns

32768 words

32000

e0

EAR99

Tin/Lead (Sn/Pb)

8542.32.00.41

DUAL

J BEND

1.27 mm

unknown

R-PDSO-J28

不合格

COMMERCIAL

ASYNCHRONOUS

0.09 mA

32KX8

3-STATE

8

0.002 A

262144 bit

PARALLEL

COMMON

标准SRAM

N/A

-

NO

36

70 °C

CERAMIC

DIP

DIP36,.6

RECTANGULAR

IN-LINE

5 V

无

Obsolete

PARADIGM TECHNOLOGY INC

DIP, DIP36,.6

25 ns

524288 words

512000

e0

3A991.B.2.A

Tin/Lead (Sn/Pb)

8542.32.00.41

DUAL

THROUGH-HOLE

2.54 mm

unknown

R-XDIP-T36

不合格

COMMERCIAL

ASYNCHRONOUS

0.18 mA

512KX8

3-STATE

8

0.03 A

4194304 bit

PARALLEL

COMMON

标准SRAM

4.5 V

N/A

-

表面贴装

SOT-23-5 Thin, TSOT-23-5

TSOT-23-5

微芯片技术

- 40 C

5000

1 mA

1.7 V

SMD/SMT

2-Wire, I2C

100 Year

Microchip

Microchip Technology / Atmel

AT24CSW040

Non-Volatile

活跃

MSL 3 - 168 hours

1 MHz

+ 85 C

3.6 V

-40°C ~ 85°C (TC)

切割胶带

-

Memory & Data Storage

1.7V ~ 3.6V

4Kbit

200 uA

1 MHz

1 mA

450 ns

EEPROM

I2C

512 x 8

5ms

EEPROM

EEPROM

512 x 8

N/A

-

表面贴装

SOT-23-5 Thin, TSOT-23-5

TSOT-23-5

微芯片技术

- 40 C

5000

1 mA

1.7 V

SMD/SMT

2-Wire, I2C

100 Year

Microchip

Microchip Technology / Atmel

活跃

Non-Volatile

AT24CSW080

MSL 3 - 168 hours

1 MHz

+ 85 C

3.6 V

-40°C ~ 85°C (TC)

切割胶带

-

Memory & Data Storage

1.7V ~ 3.6V

8Kbit

200 uA

1 MHz

1 mA

450 ns

EEPROM

I2C

1 k x 8

5ms

EEPROM

EEPROM

1K x 8

N/A

-

表面贴装

SOT-23-5 Thin, TSOT-23-5

TSOT-23-5

微芯片技术

- 40 C

5000

1 mA

1.7 V

SMD/SMT

2-Wire, I2C

100 Year

Microchip

Microchip Technology / Atmel

活跃

Non-Volatile

AT24CSW010

MSL 3 - 168 hours

1 MHz

+ 85 C

3.6 V

-40°C ~ 85°C (TC)

切割胶带

-

Memory & Data Storage

1.7V ~ 3.6V

1Kbit

200 uA

1 MHz

1 mA

450 ns

EEPROM

I2C

128 x 8

5ms

EEPROM

EEPROM

128 x 8

N/A

-

通孔

TO-92-3

TO-92-3

微芯片技术

AT21CS01

活跃

Non-Volatile

3.6 V

Details

通孔

1-Wire, I2C

1.7 V

- 40 C

+ 85 C

100 Year

300 uA

1000

Bulk

-40°C ~ 85°C (TC)

Bulk

-

EEPROM

1.7 V to 3.6 V

1 kbit

125 kbps

EEPROM

I²C, Single Wire

128 x 8

5ms

128 x 8

N/A

-

表面贴装

UDFN-8

8-UDFN (2x3)

微芯片技术

Non-Volatile

活跃

Tape & Reel (TR)

5.5 V

Details

SMD/SMT

I2C

1.7 V

- 40 C

+ 125 C

3.4 MHz

200 Year

1 mA

5000

-40°C ~ 125°C (TA)

Reel

-

EEPROM

1.7 V to 5.5 V

256 kbit

3 uA

1 MHz

400 ns

EEPROM

I²C

32 k x 8

5ms

32K x 8

N/A

-

NO

8

8

DIP, DIP8,.3

IN-LINE

256

PLASTIC/EPOXY

DIP8,.3

-40 °C

未说明

85 °C

有

93LC66C-I/PG

3 MHz

256 words

2.5 V

DIP

RECTANGULAR

Microchip Technology Inc

活跃

MICROCHIP TECHNOLOGY INC

5.17

DIP

e3

有

EAR99

Matte Tin (Sn)

ALSO CONFIGURABLE AS 512 X 8

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

未说明

1

2.54 mm

compliant

R-PDIP-T8

不合格

3/5 V

INDUSTRIAL

SYNCHRONOUS

0.002 mA

256X16

5.33 mm

16

0.000001 A

4096 bit

SERIAL

EEPROM

MICROWIRE

1000000 Write/Erase Cycles

6 ms

200

SOFTWARE

8

5.5 V

1.8 V

9.27 mm

7.62 mm

N/A

-

NO

66

66

512000

CERAMIC, METAL-SEALED COFIRED

未说明

17 ns

70 °C

无

WS512K32NV-17H1C

524288 words

3.3 V

PGA

SQUARE

Microsemi Corporation

活跃

MICROSEMI CORP

5.15

PGA

1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66

网格排列

e4

无

3A991.B.2.A

GOLD

USER CONFIGURABLE AS 2 X 512K X 16 OR 4 X 512K X 8

8542.32.00.41

CMOS

PERPENDICULAR

PIN/PEG

未说明

1

2.54 mm

unknown

S-CPGA-P66

不合格

COMMERCIAL

ASYNCHRONOUS

512KX32

4.6 mm

32

16777216 bit

PARALLEL

SRAM MODULE

3.6 V

3 V

27.3 mm

27.3 mm

N/A

-

YES

32

524288 words

5 V

RECTANGULAR

White Microelectronics

Transferred

WHITE MICROELECTRONICS

5.57

CERAMIC, SOJ-32

小概要

512000

CERAMIC, METAL-SEALED COFIRED

20 ns

70 °C

WMS512K8-20DEC

BATTERY BACKUP

CMOS

DUAL

J BEND

1

unknown

R-CDSO-J32

不合格

COMMERCIAL

1

ASYNCHRONOUS

512KX8

3-STATE

8

4194304 bit

PARALLEL

标准SRAM

2 V

5.5 V

4.5 V

YES

N/A

-

NO

32

125 °C

WMS512K8-20CM

524288 words

5 V

RECTANGULAR

White Microelectronics

Transferred

WHITE MICROELECTRONICS

5.57

0.600 INCH, CERAMIC, DIP-32

IN-LINE

512000

CERAMIC, METAL-SEALED COFIRED

-55 °C

20 ns

BATTERY BACKUP

CMOS

DUAL

THROUGH-HOLE

1

unknown

R-CDIP-T32

不合格

MILITARY

1

ASYNCHRONOUS

512KX8

3-STATE

8

4194304 bit

PARALLEL

标准SRAM

2 V

5.5 V

4.5 V

YES

N/A

-

YES

152

1

TE Connectivity

TE Connectivity / AMP

17 X 23 MM, PLASTIC, BGA-152

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

WEDPZ512K72V-100BI

524288 words

3.3 V

BGA

RECTANGULAR

接触制造商

MERCURY SYSTEMS INC

5.63

3A991.B.2.A

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

unknown

R-PBGA-B152

不合格

INDUSTRIAL

SYNCHRONOUS

512KX72

72

37748736 bit

PARALLEL

ZBT SRAM

3.465 V

3.135 V

TE Connectivity

N/A

-

2 Pin

Details

-

+ 105 C

0.846575 oz

- 40 C

100

EET-HC2D681HA EET-HC2D681BA

Cornell Dubilier

200 VDC

Cornell Dubilier - CDE

NOR

Bulk

381LQ

20 %

高纹波咬接式电容器

125 °C

-55 °C

680 uF

Capacitors

5 V

卡入式

10 mm

Parallel

-

1.75 A

120 Hz

22 b

电解电容器

128 Mb

293 mOhms

铝电解电容器

Aluminum Electrolytic Capacitors - Snap In

22 mm

-

40 mm

无

N/A

-

Production (Last Updated: 2 years ago)

Compliant

NOR

85 °C

-20 °C

33 MHz

SPI

256 kB

33 ns

8 b

33 MHz

3.6 V

3 V

N/A

-

19 Weeks

Production (Last Updated: 2 years ago)

YES

28

28

SQUARE

Microchip Technology Inc

5461

活跃

21

MICROCHIP TECHNOLOGY INC

3.6 V

5.4

QFN

有

DC

Non-Compliant

6 X 6 MM, LEAD FREE, PLASTIC, QFN-28

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

1

PLASTIC/EPOXY

LCC28,.24SQ,25

-40 °C

3.3 V

40

3 V

125 °C

有

DSPIC33FJ16GP102T-E/ML

1024

32 MHz

HVQCCN

e3

3A991.A.2

Matte Tin (Sn)

8542.31.00.01

数字信号处理器

CMOS

QUAD

无铅

260

0.65 mm

compliant

S-PQCC-N28

不合格

3.3 V

AUTOMOTIVE

16 MHz

MICROCONTROLLER

21 mA

16

YES

NO

YES

NO

1 mm

24

16

固定点

1024

FLASH

6 mm

6 mm

N/A

-

66

有

NOR

Bulk

70 °C

0 °C

5 V

Parallel

22 b

128 Mb

无

N/A

-

YES

8

8

SOIC

Non-Compliant

4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1

1000

PLASTIC/EPOXY

TSSOP8,.25

-40 °C

40

85 °C

有

25AA080AT-I/STG

10 MHz

1024 words

2.5 V

TSSOP

RECTANGULAR

Microchip Technology Inc

活跃

MICROCHIP TECHNOLOGY INC

5.24

e3

有

EAR99

Matte Tin (Sn)

Female

8542.32.00.51

EEPROMs

CMOS

DUAL

鸥翼

260

1

0.65 mm

compliant

R-PDSO-G8

不合格

2/5 V

INDUSTRIAL

SYNCHRONOUS

0.006 mA

1KX8

1.2 mm

8

0.000001 A

8192 bit

SERIAL

EEPROM

SPI

1000000 Write/Erase Cycles

5 ms

200

HARDWARE/SOFTWARE

5.5 V

1.8 V

4.4 mm

3 mm

N/A

-

YES

8

8

3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8

小概要

1

4000

PLASTIC/EPOXY

-40 °C

40

125 °C

有

25LC320T-E/SNG

2 MHz

4096 words

5 V

SOP

RECTANGULAR

Microchip Technology Inc

不推荐

MICROCHIP TECHNOLOGY INC

5.15

SOIC

e3

有

EAR99

Matte Tin (Sn)

8542.32.00.51

CMOS

DUAL

鸥翼

260

1

1.27 mm

compliant

R-PDSO-G8

不合格

AUTOMOTIVE

SYNCHRONOUS

4KX8

1.75 mm

8

32768 bit

SERIAL

EEPROM

SPI

5 ms

5.5 V

2.5 V

4.9 mm

3.9 mm

N/A

-

YES

8

8

0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8

小概要

1

2000

PLASTIC/EPOXY

SOP8,.25

-40 °C

40

125 °C

有

24LC16BT-E/SNG

0.4 MHz

2048 words

5 V

SOP

RECTANGULAR

Microchip Technology Inc

活跃

MICROCHIP TECHNOLOGY INC

5.07

SOIC

e3

有

EAR99

Matte Tin (Sn)

1 MILLION ERASE/WRITE CYCLES

8542.32.00.51

EEPROMs

CMOS

DUAL

鸥翼

260

1

1.27 mm

compliant

R-PDSO-G8

不合格

3/5 V

AUTOMOTIVE

SYNCHRONOUS

0.003 mA

2KX8

1.75 mm

8

0.000005 A

16384 bit

SERIAL

EEPROM

I2C

1000000 Write/Erase Cycles

5 ms

200

HARDWARE

5.5 V

2.5 V

1010MMMR

4.9 mm

3.91 mm

N/A

-

NO

8

8

0.300 INCH, ROHS COMPLIANT, PLASTIC, MS-001, DIP-8

IN-LINE

2000

PLASTIC/EPOXY

DIP8,.3

-40 °C

未说明

125 °C

有

24LC16B-E/PG

0.4 MHz

2048 words

5 V

DIP

RECTANGULAR

Microchip Technology Inc

活跃

MICROCHIP TECHNOLOGY INC

5.11

DIP

e3

有

EAR99

Matte Tin (Sn)

1 MILLION ERASE/WRITE CYCLES

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

未说明

1

2.54 mm

compliant

R-PDIP-T8

不合格

3/5 V

AUTOMOTIVE

SYNCHRONOUS

0.003 mA

2KX8

4.32 mm

8

0.000005 A

16384 bit

SERIAL

EEPROM

I2C

1000000 Write/Erase Cycles

5 ms

200

HARDWARE

5.5 V

2.5 V

1010MMMR

9.46 mm

7.62 mm