Advanced HF75-28F

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

140 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

10 at 1 A, 5 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

10

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

30 MHz

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

DC Current Gain hFE Max

100 at 1 A, 5 V

Collector- Emitter Voltage VCEO Max

35 V

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

60 V

连续集电极电流

10 A

产品类别

Bipolar Transistors - BJT