Advanced MRF171

包装/外壳

211-07-3

质量

3.175147 kg

RoHS

Non-Compliant

Vds - Drain-Source Breakdown Voltage

65 V

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

115 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

40 V

Unit Weight

0.297389 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

Id - Continuous Drain Current

4.5 A

Rds On - Drain-Source Resistance

0.7 mOhms

包装

Tray

类型

射频功率MOSFET

子类别

MOSFETs

技术

Si

工作频率

200 MHz

配置

Single

输出功率

45 W

产品类别

射频MOSFET晶体管

增益

15 dB

产品类别

射频MOSFET晶体管

宽度

463.55 mm

高度

107.95 mm

长度

476.25 mm