Advanced MRF172

包装/外壳

211-07-3

表面安装

NO

终端数量

4

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

65 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

220 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

40 V

Minimum Operating Temperature

- 65 C

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Id - Continuous Drain Current

9 A

Rds On - Drain-Source Resistance

1.5 mOhms

Package Description

FLANGE MOUNT, O-CRFM-F4

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Temperature-Max

200 °C

Manufacturer Part Number

MRF172

Package Shape

ROUND

Part Life Cycle Code

活跃

Ihs Manufacturer

ASI SEMICONDUCTOR INC

Risk Rank

4.61

Drain Current-Max (ID)

9 A

包装

Tray

ECCN 代码

EAR99

类型

射频功率MOSFET

子类别

MOSFETs

技术

Si

端子位置

RADIAL

终端形式

FLAT

Reach合规守则

unknown

引脚数量

4

JESD-30代码

O-CRFM-F4

资历状况

不合格

工作频率

200 MHz

配置

Single

操作模式

增强型MOSFET

输出功率

80 W

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

产品类别

射频MOSFET晶体管

增益

10 dB

最大漏极电流 (Abs) (ID)

9 A

DS 击穿电压-最小值

65 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

220 W

最高频段

甚高频段

产品类别

射频MOSFET晶体管