Advanced AGR09030EF

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

65 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

80 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

15 V

Minimum Operating Temperature

- 65 C

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Id - Continuous Drain Current

4.25 A

Package Description

FLANGE MOUNT, R-CDFM-F2

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

30

Operating Temperature-Max

200 °C

Manufacturer Part Number

AGR09030EF

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

BROADCOM LTD

Risk Rank

5.2

Drain Current-Max (ID)

4.25 A

包装

Tray

JESD-609代码

e0

ECCN 代码

EAR99

类型

射频功率MOSFET

端子表面处理

锡铅

附加功能

HIGH RELIABILITY

子类别

MOSFETs

技术

Si

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

225

Reach合规守则

compliant

JESD-30代码

R-CDFM-F2

资历状况

不合格

工作频率

895 MHz

配置

Single

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

产品类别

射频MOSFET晶体管

DS 击穿电压-最小值

65 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

超高频段

产品类别

射频MOSFET晶体管