AMI Semiconductor MUN2113T1G
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MUN2113T1G
137-MUN2113T1G
晶体管 - 双极(BJT)- 单,预偏置
TO-236-3, SC-59, SOT-23-3
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MUN2113T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from AMI Semiconductor stock available at utmel
1最小包装量--
MUN2113T1G详情
AMI Semiconductor MUN2113T1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
生命周期状态
Production (Last Updated: 1 year ago)
包装/外壳
TO-236-3, SC-59, SOT-23-3
安装类型
表面贴装
供应商器件包装
SC-59
Manufacturer Lifecycle Status
PRODUCTION (Last Updated: 1 year ago)
Other Names
MUN2113T1G-ND MUN2113T1GOSTR
Current-Collector (Ic) (Max)
100mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
包装
Tape & Reel (TR)
系列
-
湿度敏感性等级(MSL)
1 (Unlimited)
基本部件号
MUN2113
功率 - 最大
230mW
晶体管类型
PNP - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
80 @ 5mA, 10V
最大集极截止电流
500nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
250mV @ 300µA, 10mA
电压 - 集射极击穿(最大值)
50V
电阻基(R1)
47 kOhms
电阻-发射极基极(R2)
47 kOhms
MUN2113T1G拓展信息
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