AMI Semiconductor MUN2216T1G
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MUN2216T1G
137-MUN2216T1G
晶体管 - 双极(BJT)- 单,预偏置
TO-236-3, SC-59, SOT-23-3
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MUN2216T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from AMI Semiconductor stock available at utmel
1最小包装量--
MUN2216T1G详情
AMI Semiconductor MUN2216T1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SC-59
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current-Collector (Ic) (Max)
100mA
Other Names
MUN2216T1G-ND MUN2216T1GOSTR
系列
-
包装
Tape & Reel (TR)
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
338mW
晶体管类型
NPN - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
160 @ 5mA, 10V
最大集极截止电流
500nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
250mV @ 1mA, 10mA
电压 - 集射极击穿(最大值)
50V
电阻基(R1)
4.7 kOhms
MUN2216T1G拓展信息
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哦! 它是空的。