Atmel (Microchip Technology) APT18M100B

包装/外壳

TO-247-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1 kV

Id - Continuous Drain Current

18 A

Rds On - Drain-Source Resistance

600 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

150 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

625 W

Unit Weight

0.211644 oz

Typical Turn-On Delay Time

22 ns

Typical Turn-Off Delay Time

75 ns

Factory Pack QuantityFactory Pack Quantity

1

Forward Transconductance - Min

19 S

Fall Time

19 ns

Tradename

Power MOS 8

Channel Mode

Enhancement

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

20 ns

宽度

16.26 mm

长度

21.46 mm

高度

5.31 mm