Atmel (Microchip Technology) APT56M50B2

包装/外壳

T-MAX-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

56 A

Rds On - Drain-Source Resistance

85 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

220 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

780 W

Channel Mode

Enhancement

Tradename

Power MOS 8

Fall Time

33 ns

Forward Transconductance - Min

43 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

100 ns

Typical Turn-On Delay Time

38 ns

Unit Weight

0.208116 oz

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

45 ns

高度

5.31 mm

长度

21.46 mm

宽度

16.26 mm