Central Semiconductor 2N4391 TIN/LEAD

包装/外壳

TO-18-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Vgs - Gate-Source Breakdown Voltage

40 V

Gate-Source Cutoff Voltage

10 V

Drain-Source Current at Vgs=0

150 mA

Id - Continuous Drain Current

50 mA

Rds On - Drain-Source Resistance

30 Ohms

Pd - Power Dissipation

1.8 W

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 175 C

Maximum Drain Gate Voltage

40 V

Factory Pack QuantityFactory Pack Quantity

2000

系列

2N4391

包装

Bulk

配置

Single