Central Semiconductor 2N4856TIN LEAD

表面安装

NO

包装/外壳

TO-18-3

材料

Si

终端数量

3

晶体管元件材料

SILICON

ECCN (US)

EAR99

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

40

Maximum Drain Gate Voltage (V)

40

Maximum Power Dissipation (mW)

360

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

TO-206-AA

Supplier Package

TO-18

Military

无

Mounting

通孔

Package Height

5.33(Max)

PCB changed

3

Lead Shape

通孔

Package Style

CYLINDRICAL

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

无

Manufacturer Part Number

2N4856TIN/LEAD

Package Shape

ROUND

Manufacturer

Central Semiconductor Corp

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.63

Pd - Power Dissipation

360 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Drain-Source Current at Vgs=0

50 mA

Mounting Styles

通孔

Rds On - Drain-Source Resistance

25 Ohms

Vgs - Gate-Source Breakdown Voltage

40 V

Gate-Source Cutoff Voltage

10 V

包装

Box

系列

2N4856

JESD-609代码

e0

零件状态

活跃

端子表面处理

Tin/Lead (Sn/Pb)

技术

Si

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

O-MBCY-W3

配置

Single

操作模式

DEPLETION MODE

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-18

漏极-源极导通最大电阻

25 Ω

DS 击穿电压-最小值

40 V

信道型

N

场效应管技术

JUNCTION

最大耗散功率(Abs)

0.36 W

反馈上限-最大值 (Crss)

8 pF

环境耗散-最大值

0.36 W

直径

5.84(Max)

RoHS状态

RoHS non-compliant