Central Semiconductor CDM22011-600LRFP SL PBFREE

包装/外壳

TO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

11 A

Rds On - Drain-Source Resistance

300 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

23.05 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

25 W

Channel Mode

Enhancement

Tradename

UltraMOS

Factory Pack QuantityFactory Pack Quantity

50

Unit Weight

0.068784 oz

包装

Tube

配置

Single

通道数量

1 Channel